丝印：7611；Package：SIP-3L；Complementary Output Hall Effect Fan Driver

GENERAL DESCRIPTION MA7611 is integrated Hall sensors with output drivers, mainly designed for electronic commutation of brush-less DC Fan. This IC is using HV BCD process internally includes the regulator, protecting diode, Hall plate, amplifier, comparator, and a pair of complementary open-D

文件：127.71 Kbytes 页数：2 Pages

MPOWERMajor-Power Technology Co., LTD.

久昌科技久昌科技股份有限公司

丝印：7611；Package：WSON(DRV)；UCC27611 5-V, 4-A to 6-A Low Side GaN Driver

1 Features • Enhancement Mode Gallium Nitride FETs (eGANFETs) • 4-V to 18-V Single Supply Range VDD Range • Drive Voltage VREF Regulated to 5 V • 4-A Peak Source and 6-A Peak Sink Drive Current • 1-Ω and 0.35-Ω Pullup and Pulldown Resistance (Maximize High Slew-Rate dV and dt Immunity) •

文件：1.25654 Mbytes 页数：30 Pages

TI

德州仪器

丝印：7611；Package：WSON(DRV)；UCC27611 5-V, 4-A to 6-A Low Side GaN Driver

1 Features • Enhancement Mode Gallium Nitride FETs (eGANFETs) • 4-V to 18-V Single Supply Range VDD Range • Drive Voltage VREF Regulated to 5 V • 4-A Peak Source and 6-A Peak Sink Drive Current • 1-Ω and 0.35-Ω Pullup and Pulldown Resistance (Maximize High Slew-Rate dV and dt Immunity) •

文件：1.25654 Mbytes 页数：30 Pages

TI

德州仪器

丝印：7611；Package：WSON(DRV)；UCC27611 5-V, 4-A to 6-A Low Side GaN Driver

1 Features • Enhancement Mode Gallium Nitride FETs (eGANFETs) • 4-V to 18-V Single Supply Range VDD Range • Drive Voltage VREF Regulated to 5 V • 4-A Peak Source and 6-A Peak Sink Drive Current • 1-Ω and 0.35-Ω Pullup and Pulldown Resistance (Maximize High Slew-Rate dV and dt Immunity) •

文件：1.25654 Mbytes 页数：30 Pages

TI

德州仪器

丝印：7611；Package：WSON(DRV)；UCC27611 5-V, 4-A to 6-A Low Side GaN Driver

1 Features • Enhancement Mode Gallium Nitride FETs (eGANFETs) • 4-V to 18-V Single Supply Range VDD Range • Drive Voltage VREF Regulated to 5 V • 4-A Peak Source and 6-A Peak Sink Drive Current • 1-Ω and 0.35-Ω Pullup and Pulldown Resistance (Maximize High Slew-Rate dV and dt Immunity) •

文件：1.25654 Mbytes 页数：30 Pages

TI

德州仪器

丝印：7611；Package：WSON(DRV)；UCC27611 5-V, 4-A to 6-A Low Side GaN Driver

1 Features • Enhancement Mode Gallium Nitride FETs (eGANFETs) • 4-V to 18-V Single Supply Range VDD Range • Drive Voltage VREF Regulated to 5 V • 4-A Peak Source and 6-A Peak Sink Drive Current • 1-Ω and 0.35-Ω Pullup and Pulldown Resistance (Maximize High Slew-Rate dV and dt Immunity) •

文件：1.25654 Mbytes 页数：30 Pages

TI

德州仪器

丝印：7611；Package：WSON(DRV)；UCC27611 5-V, 4-A to 6-A Low Side GaN Driver

1 Features • Enhancement Mode Gallium Nitride FETs (eGANFETs) • 4-V to 18-V Single Supply Range VDD Range • Drive Voltage VREF Regulated to 5 V • 4-A Peak Source and 6-A Peak Sink Drive Current • 1-Ω and 0.35-Ω Pullup and Pulldown Resistance (Maximize High Slew-Rate dV and dt Immunity) •

文件：1.25654 Mbytes 页数：30 Pages

TI

德州仪器

丝印：7611；Package：WSON(DRV)；UCC27611 5-V, 4-A to 6-A Low Side GaN Driver

1 Features • Enhancement Mode Gallium Nitride FETs (eGANFETs) • 4-V to 18-V Single Supply Range VDD Range • Drive Voltage VREF Regulated to 5 V • 4-A Peak Source and 6-A Peak Sink Drive Current • 1-Ω and 0.35-Ω Pullup and Pulldown Resistance (Maximize High Slew-Rate dV and dt Immunity) •

文件：1.25654 Mbytes 页数：30 Pages

TI

德州仪器

丝印：7611；Package：WSON(DRV)；UCC27611 5-V, 4-A to 6-A Low Side GaN Driver

1 Features • Enhancement Mode Gallium Nitride FETs (eGANFETs) • 4-V to 18-V Single Supply Range VDD Range • Drive Voltage VREF Regulated to 5 V • 4-A Peak Source and 6-A Peak Sink Drive Current • 1-Ω and 0.35-Ω Pullup and Pulldown Resistance (Maximize High Slew-Rate dV and dt Immunity) •

文件：1.25654 Mbytes 页数：30 Pages

TI

德州仪器

丝印：76112C；Package：SOT-223；TLV761 16V, 1A, Fixed Output Linear Voltage Regulator

1 Features • Pin-compatible with industry-standard LM1117 and TLV1117 (x1117) devices in select packages • Input voltage range VIN: 2.5V to 16V (abs max rating of 20V) • Output voltage range VOUT: – 0.8V to 13V (fixed, 100mV steps) • Output current: Up to 1A • Low quiescent current IQ: –

文件：1.83509 Mbytes 页数：26 Pages

TI

德州仪器