丝印：75R025M2；Package：PG-HDSOP-22；SiC MOSFET CoolSiC™ MOSFET 750 V G2

Features • Highly robust 750V technology, 100% avalanche tested • Best‑in‑class RDS(on) x Qfr • Excellent RDS(on) x Qoss and RDS(on) x QG • Unique combination of low Crss/Ciss and high VGS(th) • Infineon proprietary die attach technology • Cutting edge TSC package with material group I

文件：1.25465 Mbytes 页数：20 Pages

INFINEON

英飞凌

丝印：75R027M1；Package：PG-HDSOP-22；MOSFET CoolSiCª Power Device 750 V G1

Features • Highly robust 750V technology, 100% avalanche tested • Best-in-class RDS(on) x Qfr • Excellent RDS(on) x Qoss and RDS(on) x QG • Unique combination of low Crss/Ciss and high VGS(th) • Infineon proprietary die attach technology • Cutting edge top side cooling package (QDPAK) •

文件：1.35586 Mbytes 页数：15 Pages

INFINEON

英飞凌

丝印：75R040M1；Package：PG-HDSOP-22；CoolSiCª Power Device 750 V G1

Features • Highly robust 750V technology, 100% avalanche tested • Best-in-class RDS(on) x Qfr • Excellent RDS(on) x Qoss and RDS(on) x QG • Unique combination of low Crss/Ciss and high VGS(th) • Infineon proprietary die attach technology • Cutting edge top side cooling package (QDPAK) •

文件：1.31725 Mbytes 页数：15 Pages

INFINEON

英飞凌

丝印：75R060M1；Package：PG-HDSOP-22；MOSFET CoolSiCª Power Device 750 V G1

Features • Highly robust 750V technology, 100% avalanche tested • Best-in-class RDS(on) x Qfr • Excellent RDS(on) x Qoss and RDS(on) x QG • Unique combination of low Crss/Ciss and high VGS(th) • Infineon proprietary die attach technology • Cutting edge top side cooling package (QDPAK) •

文件：1.27675 Mbytes 页数：15 Pages

INFINEON

英飞凌

丝印：75R060M2；Package：PG-HDSOP-22；SiC MOSFET CoolSiC™ MOSFET 750 V G2

Features • Highly robust 750V technology, 100% avalanche tested • Best‑in‑class RDS(on) x Qfr • Excellent RDS(on) x Qoss and RDS(on) x QG • Unique combination of low Crss/Ciss and high VGS(th) • Infineon proprietary die attach technology • Cutting edge TSC package with material group I

文件：1.21694 Mbytes 页数：20 Pages

INFINEON

英飞凌

丝印：75R090M1；Package：PG-HDSOP-22；MOSFET CoolSiCª Power Device 750 V G1

Features • Highly robust 750V technology, 100% avalanche tested • Best-in-class RDS(on) x Qfr • Excellent RDS(on) x Qoss and RDS(on) x QG • Unique combination of low Crss/Ciss and high VGS(th) • Infineon proprietary die attach technology • Cutting edge top side cooling package (QDPAK) •

文件：1.32466 Mbytes 页数：15 Pages

INFINEON

英飞凌

丝印：75R140M1；Package：PG-HDSOP-22；CoolSiCª Power Device 750 V G1

Features • Highly robust 750V technology, 100% avalanche tested • Best-in-class RDS(on) x Qfr • Excellent RDS(on) x Qoss and RDS(on) x QG • Unique combination of low Crss/Ciss and high VGS(th) • Infineon proprietary die attach technology • Cutting edge top side cooling package (QDPAK) •

文件：1.27136 Mbytes 页数：15 Pages

INFINEON

英飞凌

丝印：75R008M1；Package：PG-TO247-4；CoolSiC™ M1 CoolSiC™ Power Device 750 V G1

Features • Highly robust 750V technology, 100% avalanche tested • Best‑in‑class RDS(on) x Qfr • Excellent RDS(on) x Qoss and RDS(on) x QG • Unique combination of low Crss/Ciss and high VGS(th) • Infineon proprietary die attach technology • Driver source pin available • Best‑in‑class RDS

文件：1.00115 Mbytes 页数：16 Pages

INFINEON

英飞凌

丝印：75R016M1；Package：PG-TO247-4；MOSFET CoolSiCª Power Device 750 V G1

Features • Highly robust 750V technology, 100% avalanche tested • Best-in-class RDS(on) x Qfr • Excellent RDS(on) x Qoss and RDS(on) x QG • Unique combination of low Crss/Ciss and high VGS(th) • Infineon proprietary die attach technology • Driver source pin available Benefits • Enhan

文件：1.5392 Mbytes 页数：15 Pages

INFINEON

英飞凌

丝印：75R020M1；Package：PG-TO247-4；MOSFET CoolSiCª Power Device 750 V G1

Features • Highly robust 750V technology, 100% avalanche tested • Best-in-class RDS(on) x Qfr • Excellent RDS(on) x Qoss and RDS(on) x QG • Unique combination of low Crss/Ciss and high VGS(th) • Infineon proprietary die attach technology • Driver source pin available Benefits • Enhan

文件：1.53155 Mbytes 页数：15 Pages

INFINEON

英飞凌