丝印：75R；Package：SOT-323；N-Channel Enhancement Mode MOSFET

Feature Advanced Trench Process Technology Low Threshold Voltage Fast Switching Speed Halogen-Free & Lead-Free Applications Load Switch for Portable Devices Voltage Controlled Small Signal Switch

文件：3.97509 Mbytes 页数：7 Pages

UNSEMI

优恩半导体

丝印：75R004M2；Package：PG-HDSOP-22；SiC MOSFET CoolSiC™ MOSFET 750 V G2

Features • Highly robust 750V technology, 100% avalanche tested • Best‑in‑class RDS(on) x Qfr • Excellent RDS(on) x Qoss and RDS(on) x QG • Unique combination of low Crss/Ciss and high VGS(th) • Infineon proprietary die attach technology • Cutting edge TSC package with material group I

文件：1.22157 Mbytes 页数：19 Pages

Infineon

英飞凌

丝印：75R007M2；Package：PG-HDSOP-22；SiC MOSFET CoolSiC™ MOSFET 750 V G2

Features • Highly robust 750V technology, 100% avalanche tested • Best‑in‑class RDS(on) x Qfr • Excellent RDS(on) x Qoss and RDS(on) x QG • Unique combination of low Crss/Ciss and high VGS(th) • Infineon proprietary die attach technology • Cutting edge TSC package with material group I

文件：1.25382 Mbytes 页数：20 Pages

Infineon

英飞凌

丝印：75R008M1；Package：PG-HDSOP-22；CoolSiCª Power Device 750 V G1

Features • Highly robust 750V technology, 100% avalanche tested • Best-in-class RDS(on) x Qfr • Excellent RDS(on) x Qoss and RDS(on) x QG • Unique combination of low Crss/Ciss and high VGS(th) • Infineon proprietary die attach technology • Cutting edge top side cooling package (QDPAK) •

文件：1.34785 Mbytes 页数：15 Pages

Infineon

英飞凌

丝印：75R016M1；Package：PG-HDSOP-22；CoolSiCª Power Device 750 V G1

Features • Highly robust 750V technology, 100% avalanche tested • Best-in-class RDS(on) x Qfr • Excellent RDS(on) x Qoss and RDS(on) x QG • Unique combination of low Crss/Ciss and high VGS(th) • Infineon proprietary die attach technology • Cutting edge top side cooling package (QDPAK) •

文件：1.36122 Mbytes 页数：15 Pages

Infineon

英飞凌

丝印：75R016M2；Package：PG-HDSOP-22；SiC MOSFET CoolSiC™ MOSFET 750 V G2

Features • Highly robust 750V technology, 100% avalanche tested • Best‑in‑class RDS(on) x Qfr • Excellent RDS(on) x Qoss and RDS(on) x QG • Unique combination of low Crss/Ciss and high VGS(th) • Infineon proprietary die attach technology • Cutting edge TSC package with material group I

文件：1.25407 Mbytes 页数：20 Pages

Infineon

英飞凌

丝印：75R020M1；Package：PG-HDSOP-22；MOSFET CoolSiCª Power Device 750 V G1

Features • Highly robust 750V technology, 100% avalanche tested • Best-in-class RDS(on) x Qfr • Excellent RDS(on) x Qoss and RDS(on) x QG • Unique combination of low Crss/Ciss and high VGS(th) • Infineon proprietary die attach technology • Cutting edge top side cooling package (QDPAK) •

文件：1.36699 Mbytes 页数：15 Pages

Infineon

英飞凌

丝印：75R025M2；Package：PG-HDSOP-22；SiC MOSFET CoolSiC™ MOSFET 750 V G2

Features • Highly robust 750V technology, 100% avalanche tested • Best‑in‑class RDS(on) x Qfr • Excellent RDS(on) x Qoss and RDS(on) x QG • Unique combination of low Crss/Ciss and high VGS(th) • Infineon proprietary die attach technology • Cutting edge TSC package with material group I

文件：1.25465 Mbytes 页数：20 Pages

Infineon

英飞凌

丝印：75R027M1；Package：PG-HDSOP-22；MOSFET CoolSiCª Power Device 750 V G1

Features • Highly robust 750V technology, 100% avalanche tested • Best-in-class RDS(on) x Qfr • Excellent RDS(on) x Qoss and RDS(on) x QG • Unique combination of low Crss/Ciss and high VGS(th) • Infineon proprietary die attach technology • Cutting edge top side cooling package (QDPAK) •

文件：1.35586 Mbytes 页数：15 Pages

Infineon

英飞凌

丝印：75R040M1；Package：PG-HDSOP-22；CoolSiCª Power Device 750 V G1

Features • Highly robust 750V technology, 100% avalanche tested • Best-in-class RDS(on) x Qfr • Excellent RDS(on) x Qoss and RDS(on) x QG • Unique combination of low Crss/Ciss and high VGS(th) • Infineon proprietary die attach technology • Cutting edge top side cooling package (QDPAK) •

文件：1.31725 Mbytes 页数：15 Pages

Infineon

英飞凌