75A, 55V, 0.009 Ohm, N-Channel UltraFET Power MOSFETs

These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th

文件：209.06 Kbytes 页数：10 Pages

FAIRCHILD

仙童半导体

75A, 55V, 0.009 Ohm, N-Channel UltraFET Power MOSFETs

These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th

文件：283.4 Kbytes 页数：10 Pages

FAIRCHILD

仙童半导体

75A, 55V, 0.009 Ohm, N-Channel UltraFET Power MOSFETs

These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th

文件：98.9 Kbytes 页数：9 Pages

INTERSIL

N-Channel 60 V (D-S) MOSFET

FEATURES • TrenchFET® powerMOSFET • Package with low thermal resistance • 100 % Rg and UIS tested

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VBSEMI

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1.85mm by 1.85mm (.073 by .073) Pitch 5-Pair GbX짰 Backplane Connector System,Power Module, 48 Circuits, 1.3關m (50關) Gold (Au)

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MOLEX

莫仕

1.85mm by 1.85mm (.073 by .073) Pitch 4-Pair GbX짰 Backplane Connector System, Power Module, 24 Circuits, 1.27關m (50關) Gold (Au)

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MOLEX

莫仕

75A, 55V, 0.009 Ohm, N-Channel UltraFET Power MOSFETs

These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the • 75A, 55V\n• Simulation Models\n   - Temperature Compensating PSPICE® and SABER© Models\n   - Thermal Impedance PSPICE™ and SABER Models\n      Available on the WEB at:\n      www.Intersil.com/families/models.htm\n• Peak Current vs Pulse Width Curve\n• UIS Rating Curve\n• Related Literature\n   - T;

Renesas

瑞萨

75A, 55V, 0.009 Ohm, N-Channel UltraFET Power MOSFETs

These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the • 75A, 55V\n• Simulation Models\n   - Temperature Compensating PSPICE® and SABER™ Models\n   - Thermal Impedance PSPICE™ and SABER Models\n      Available on the WEB at: www.fairchildsemi.com\n• Peak Current vs Pulse Width Curve\n• UIS Rating Curve\n• Related Literature\n   - TB334, “Guidelines for ;

ONSEMI

安森美半导体