75A, 55V, 0.009 Ohm, N-Channel UltraFET Power MOSFETs

These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the • 75A, 55V\n• Simulation Models\n   - Temperature Compensating PSPICE® and SABER© Models\n   - Thermal Impedance PSPICE™ and SABER Models\n      Available on the WEB at:\n      www.Intersil.com/families/models.htm\n• Peak Current vs Pulse Width Curve\n• UIS Rating Curve\n• Related Literature\n   - T;

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75A, 55V, 0.009 Ohm, N-Channel UltraFET Power MOSFETs

These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th

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75A, 55V, 0.009 Ohm, N-Channel UltraFET Power MOSFETs

These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th

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75A, 55V, 0.009 Ohm, N-Channel UltraFET Power MOSFETs

These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th

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