20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs

These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the • 20A, 55V\n• Simulation Models\n   - Temperature Compensated PSPICE® and SABER™ Models\n   - SPICE and SABER Thermal Impedance Models\n      Available on the WEB at: www.fairchildsemi.com\n• Peak Current vs Pulse Width Curve\n• UIS Rating Curve\n• Related Literature\n   - TB334, “Guidelines for Sol;

ONSEMI

安森美半导体

丝印：75329D；Package：TO-252AA；N-Channel UltraFET Power MOSFET 55 V, 20 A, 26 m廓

文件：665.88 Kbytes 页数：11 Pages

ONSEMI

安森美半导体

49A, 55V, 0.024 Ohm, N-Channel UltraFET Power MOSFETs

These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th

文件：252.91 Kbytes 页数：10 Pages

Fairchild

仙童半导体

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Molex

莫仕

上传：君宇国际实业有限公司

TO-263-2

FM/富满

上传：深圳广友电子有限公司