丝印：740；Package：TO-220；10A 400V N-channel Enhancement Mode Power MOSFET

文件：1.67134 Mbytes 页数：12 Pages

WXDH

东海半导体

丝印：740A；Silicon Planar Zener Diodes

FEATURES • Total power dissipation: Max. 1 W. • Wide zener reverse voltage range 3.3V to 330V. • Small plastic package suitable for surface mounted design.

文件：390.29 Kbytes 页数：3 Pages

JUXING

广东钜兴电子

丝印：740A；Package：DO-214AC；Silicon Planar Zener Diodes

FEATURES ♦ Total power dissipation: Max. 1 W. ♦ Wide zener reverse voltage range 3.3V to 330V. ♦ Small plastic package suitable for surface mounted design. ♦ Lead free in comply with EU RoHS 2011/65/EU directives MECHANICAL DATA ♦ Case: DO-214AC/SMA ♦ Terminals: Solderable per MIL-STD-750,

文件：413.63 Kbytes 页数：3 Pages

YFWDIODE

佑风微

丝印：740A；Package：DO-214AC；Complete voltage range 3.3 to 100 volts

VZ : 3.3 - 100Volts PD : 1 Watt FEATURES : * Complete voltage range 3.3 to 100 volts * High peak reverse power dissipation * High reliability * Low leakage current * Standard zener voltage tolerance is ± 5. * Pb / RoHS Free MECHANICAL DATA * Case : SMA (DO-214AC) Molded plastic * Epoxy :

文件：253.23 Kbytes 页数：2 Pages

LEIDITECH

雷卯电子

丝印：740A；Package：SMA；Silicon Planar Zener Diodes

FEATURES • Total power dissipation: Max. 1 W. • Wide zener reverse voltage range 3.3V to 330V. • Small plastic package suitable for surface mounted design. MECHANICAL DATA • Case: SMA • Terminals: Solderable per MIL-STD-750, Method 2026 • Approx. Weight: 0.055g / 0.002oz

文件：339.05 Kbytes 页数：3 Pages

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

丝印：740A；Package：SMA；SURFACE MOUNT ZENER DIODE

Zener Voltage - 3.3 to 200 Volts Peak Pulse Power - 1.0 W Features ◆ For surface mounted applications in order to optimize board space ◆ Low profile package ◆ Built-in strain relief ◆ Glass passivated junction ◆ Low inductance ◆ Typical IR less than 5.0μA above 11V ◆ High temperature solde

文件：909.59 Kbytes 页数：5 Pages

CHENDA

辰达半导体

丝印：740A；Package：SMAF；SMAF Plastic-Encapsulate Zener Diodes

Features Total power dissipation: 1W(Max.) Wide Zener Reverse Voltage Range 3.3V to 330V Small Plastic Package Suitable for Surface Mounted Design

文件：2.43729 Mbytes 页数：5 Pages

UNSEMI

优恩半导体

丝印：7403；Package：DFN-83x3；P-Channel Enhancement Mode Field Effect Transistor

General Description The AON7403/L uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. AON7403 and AON7403L are electrically identical. ​​​​​​​ -RoHS Complian

文件：189.93 Kbytes 页数：4 Pages

AOSMD

万国半导体

丝印：7405；Package：PDFN3333；P-Channel Enhancement Mode MOSFET

GENERAL FEATURES ® Vos =30V1o =-50 Rosco 8.0mQ @Ves=-10V typ Reson 18m0 @V cs=-4 5V typ

文件：2.07198 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子

丝印：7408；Package：DFN-83x3；30V N-Channel MOSFET

General Description The AON7408 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in general purpose applications. Features VDS(V) = 30V ID= 23A (VGS= 10V) RDS(ON)

文件：242.69 Kbytes 页数：4 Pages

AOSMD

万国半导体