丝印：740；Package：TO-220；10A 400V N-channel Enhancement Mode Power MOSFET

文件：1.67134 Mbytes 页数：12 Pages

WXDH

东海半导体

丝印：740A；Package：DO-214AC；Silicon Planar Zener Diodes

FEATURES ♦ Total power dissipation: Max. 1 W. ♦ Wide zener reverse voltage range 3.3V to 330V. ♦ Small plastic package suitable for surface mounted design. ♦ Lead free in comply with EU RoHS 2011/65/EU directives MECHANICAL DATA ♦ Case: DO-214AC/SMA ♦ Terminals: Solderable per MIL-STD-750,

文件：413.63 Kbytes 页数：3 Pages

YFWDIODE

佑风微

丝印：740A；Package：DO-214AC；Complete voltage range 3.3 to 100 volts

VZ : 3.3 - 100Volts PD : 1 Watt FEATURES : * Complete voltage range 3.3 to 100 volts * High peak reverse power dissipation * High reliability * Low leakage current * Standard zener voltage tolerance is ± 5. * Pb / RoHS Free MECHANICAL DATA * Case : SMA (DO-214AC) Molded plastic * Epoxy :

文件：253.23 Kbytes 页数：2 Pages

LEIDITECH

雷卯电子

丝印：740A；Silicon Planar Zener Diodes

FEATURES • Total power dissipation: Max. 1 W. • Wide zener reverse voltage range 3.3V to 330V. • Small plastic package suitable for surface mounted design.

文件：390.29 Kbytes 页数：3 Pages

JUXING

广东钜兴电子

丝印：740A；Package：DO-214A；SURFACE MOUNT ZENER DIODES

FEATURES : * Complete voltage range 3.3 to 100 volts * High peak reverse power dissipation * High reliability * Low leakage current * Standard zener voltage tolerance is ± 5%. * Pb / RoHS Free

文件：640.67 Kbytes 页数：4 Pages

SY

顺烨电子

丝印：740A；Package：SMA；Silicon Planar Zener Diodes

FEATURES • Total power dissipation: Max. 1 W. • Wide zener reverse voltage range 3.3V to 330V. • Small plastic package suitable for surface mounted design. MECHANICAL DATA • Case: SMA • Terminals: Solderable per MIL-STD-750, Method 2026 • Approx. Weight: 0.055g / 0.002oz

文件：339.05 Kbytes 页数：3 Pages

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

丝印：740A；Package：SMA；SURFACE MOUNT ZENER DIODE

Zener Voltage - 3.3 to 200 Volts Peak Pulse Power - 1.0 W Features ◆ For surface mounted applications in order to optimize board space ◆ Low profile package ◆ Built-in strain relief ◆ Glass passivated junction ◆ Low inductance ◆ Typical IR less than 5.0μA above 11V ◆ High temperature solde

文件：909.59 Kbytes 页数：5 Pages

CHENDA

辰达半导体

丝印：740A；Package：SMAF；SMAF Plastic-Encapsulate Zener Diodes

Features Total power dissipation: 1W(Max.) Wide Zener Reverse Voltage Range 3.3V to 330V Small Plastic Package Suitable for Surface Mounted Design

文件：2.43729 Mbytes 页数：5 Pages

UNSEMI

优恩半导体

丝印：7403；Package：DFN-83x3；P-Channel Enhancement Mode Field Effect Transistor

General Description The AON7403/L uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. AON7403 and AON7403L are electrically identical. ​​​​​​​ -RoHS Complian

文件：189.93 Kbytes 页数：4 Pages

AOSMD

万国半导体

丝印：7405；Package：PDFN3333；P-Channel Enhancement Mode MOSFET

GENERAL FEATURES ® Vos =30V1o =-50 Rosco 8.0mQ @Ves=-10V typ Reson 18m0 @V cs=-4 5V typ

文件：2.07198 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子