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71V67602166BGGI

256K X 36, 512K X 18 3.3V Synchronous SRAMs 2.5V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighsystemspeed: –166MHz3.5nsclockaccesstime –150MHz3.8nsclockaccesstime –133MHz4.2nsclockaccesstime ◆LBOinputselectsinterleavedorlinearburstmode ◆Self-timedwritecyclewithglobalwritecontrol(GW)

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

71V67602166BGG

256KX36,512KX183.3VSynchronousSRAMs2.5VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighsystemspeed: –166MHz3.5nsclockaccesstime –150MHz3.8nsclockaccesstime –133MHz4.2nsclockaccesstime ◆LBOinputselectsinterleavedorlinearburstmode ◆Self-timedwritecyclewithglobalwritecontrol(GW)

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

71V67602166BQG

256KX36,512KX183.3VSynchronousSRAMs2.5VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighsystemspeed: –166MHz3.5nsclockaccesstime –150MHz3.8nsclockaccesstime –133MHz4.2nsclockaccesstime ◆LBOinputselectsinterleavedorlinearburstmode ◆Self-timedwritecyclewithglobalwritecontrol(GW)

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

71V67602166BQGI

256KX36,512KX183.3VSynchronousSRAMs2.5VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighsystemspeed: –166MHz3.5nsclockaccesstime –150MHz3.8nsclockaccesstime –133MHz4.2nsclockaccesstime ◆LBOinputselectsinterleavedorlinearburstmode ◆Self-timedwritecyclewithglobalwritecontrol(GW)

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

71V67602166PFG

256KX36,512KX183.3VSynchronousSRAMs2.5VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighsystemspeed: –166MHz3.5nsclockaccesstime –150MHz3.8nsclockaccesstime –133MHz4.2nsclockaccesstime ◆LBOinputselectsinterleavedorlinearburstmode ◆Self-timedwritecyclewithglobalwritecontrol(GW)

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

71V67602166PFGI

256KX36,512KX183.3VSynchronousSRAMs2.5VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighsystemspeed: –166MHz3.5nsclockaccesstime –150MHz3.8nsclockaccesstime –133MHz4.2nsclockaccesstime ◆LBOinputselectsinterleavedorlinearburstmode ◆Self-timedwritecyclewithglobalwritecontrol(GW)

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

供应商型号品牌批号封装库存备注价格
71V67602S133BG
3583
3583
询价
IDT, Integrated Device Technol
21+
48-TFBGA
5280
进口原装!长期供应!绝对优势价格(诚信经营
询价
IDT, Integrated Device Technol
21+
119-PBGA(14x22)
56200
一级代理/放心采购
询价
IDT
1931+
N/A
1186
加我qq或微信,了解更多详细信息,体验一站式购物
询价
RENESAS(瑞萨)/IDT
2117+
PBGA-119(14x22)
315000
84个/托盘一级代理专营品牌!原装正品,优势现货,长
询价
IDT
20+
BGA-119
84
就找我吧!--邀您体验愉快问购元件!
询价
Renesas
21+
25000
原厂原包 深圳现货 主打品牌 假一赔百 可开票!
询价
RENESAS(瑞萨)/IDT
2021+
PBGA-119(14x22)
499
询价
IDT
22+
NA
1186
加我QQ或微信咨询更多详细信息,
询价
IDT, Integrated Device Techno
2022+
119-PBGA(14x22)
7300
原装现货
询价
更多71V67602166BGGI供应商 更新时间2024-4-28 16:41:00