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型号	下载订购	功能描述	制造商上传企业	LOGO
71V65803S100BQ	文件：313.82 Kbytes Page：27 Pages	256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs ZBT™ Feature 3.3V I/O, Burst Counter Pipelined Outputs Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 150MHz (3.8ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W ( 文件：313.82 Kbytes 页数：27 Pages	RENESAS 瑞萨	RENESAS
71V65803S100BQG	文件：313.82 Kbytes Page：27 Pages	256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs ZBT™ Feature 3.3V I/O, Burst Counter Pipelined Outputs Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 150MHz (3.8ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W ( 文件：313.82 Kbytes 页数：27 Pages	RENESAS 瑞萨	RENESAS
71V65803S100BQG8	文件：313.82 Kbytes Page：27 Pages	256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs ZBT™ Feature 3.3V I/O, Burst Counter Pipelined Outputs Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 150MHz (3.8ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W ( 文件：313.82 Kbytes 页数：27 Pages	RENESAS 瑞萨	RENESAS
71V65803S100BQI	文件：313.82 Kbytes Page：27 Pages	256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs ZBT™ Feature 3.3V I/O, Burst Counter Pipelined Outputs Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 150MHz (3.8ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W ( 文件：313.82 Kbytes 页数：27 Pages	RENESAS 瑞萨	RENESAS
71V65803S100PFG	文件：313.82 Kbytes Page：27 Pages	256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs ZBT™ Feature 3.3V I/O, Burst Counter Pipelined Outputs Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 150MHz (3.8ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W ( 文件：313.82 Kbytes 页数：27 Pages	RENESAS 瑞萨	RENESAS
71V65803S100PFG8	文件：313.82 Kbytes Page：27 Pages	256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs ZBT™ Feature 3.3V I/O, Burst Counter Pipelined Outputs Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 150MHz (3.8ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W ( 文件：313.82 Kbytes 页数：27 Pages	RENESAS 瑞萨	RENESAS
71V65803S100PFGI	文件：313.82 Kbytes Page：27 Pages	256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs ZBT™ Feature 3.3V I/O, Burst Counter Pipelined Outputs Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 150MHz (3.8ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W ( 文件：313.82 Kbytes 页数：27 Pages	RENESAS 瑞萨	RENESAS
71V65803S100PFGI8	文件：313.82 Kbytes Page：27 Pages	256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs ZBT™ Feature 3.3V I/O, Burst Counter Pipelined Outputs Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 150MHz (3.8ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W ( 文件：313.82 Kbytes 页数：27 Pages	RENESAS 瑞萨	RENESAS
71V65803S133BG	文件：313.82 Kbytes Page：27 Pages	256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs ZBT™ Feature 3.3V I/O, Burst Counter Pipelined Outputs Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 150MHz (3.8ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W ( 文件：313.82 Kbytes 页数：27 Pages	RENESAS 瑞萨	RENESAS
71V65803S133BG8	文件：313.82 Kbytes Page：27 Pages	256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs ZBT™ Feature 3.3V I/O, Burst Counter Pipelined Outputs Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 150MHz (3.8ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W ( 文件：313.82 Kbytes 页数：27 Pages	RENESAS 瑞萨	RENESAS

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供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市一线半导体有限公司	71V65803S100BG	IDT	24+	BGA119	1477		询价
上海鑫科润电子科技有限公司	71V65803S100BG	IDT	2007	BGA119	1477	原装现货海量库存欢迎咨询	询价
深圳市振宏微科技有限公司	71V65803S150PFG8	IDT	23+	NA	10826	专做原装正品,假一罚百!	询价
君宇国际实业有限公司	71V65803S133PF	IDT	0444+		1000	原装正品	询价
上海市鑫鸿达电子	71V65803S133PFG	Integrated Device Technology (	2022+		1	全新原装货期两周	询价
深圳市斌腾达科技有限公司	71V65803S150BGI	IDT, Integrated Device Technol	21+	48-TFBGA	5280	进口原装!长期供应!绝对优势价格(诚信经营	询价
瀚佳科技(深圳)有限公司	71V65803S150BGI	IDT, Integrated Device Technol	24+	119-PBGA(14x22)	56200	一级代理/放心采购	询价
深圳市艾宇欣科技有限公司	71V65803S150PFG	IDT	1931+	N/A	1186	加我qq或微信，了解更多详细信息,体验一站式购物	询价
艾睿（深圳）半导体有限公司	71V65803S100BG	RENESAS(瑞萨)/IDT	2447	PBGA-119(14x22)	315000	84个/托盘一级代理专营品牌!原装正品,优势现货,长	询价
深圳市科雨电子有限公司	71V65803S150BQI	IDT	25+	BGA-165	136	就找我吧!--邀您体验愉快问购元件!	询价

更多71V65803供应商更新时间2026-1-27 16:30:00

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