256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs ZBT™ Feature 3.3V I/O, Burst Counter Pipelined Outputs

Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 150MHz (3.8ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W (

文件：313.82 Kbytes 页数：27 Pages

RENESAS

瑞萨

Package：165-TBGA；包装：卷带（TR） 类别：集成电路（IC） 存储器 描述：IC SRAM 9MBIT PARALLEL 165CABGA

Renesas Electronics America Inc

256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs ZBT™ Feature 3.3V I/O, Burst Counter Pipelined Outputs

Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 150MHz (3.8ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W (

文件：313.82 Kbytes 页数：27 Pages

RENESAS

瑞萨

256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs ZBT™ Feature 3.3V I/O, Burst Counter Pipelined Outputs

Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 150MHz (3.8ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W (

文件：313.82 Kbytes 页数：27 Pages

RENESAS

瑞萨

256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs

文件：496.4 Kbytes 页数：26 Pages

IDT