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型号	下载订购	功能描述	制造商上传企业	LOGO
71V65703S85BQG	文件：311.56 Kbytes Page：27 Pages	256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 100 MHz (7.5 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/ 文件：311.56 Kbytes 页数：27 Pages	RENESAS 瑞萨	RENESAS
71V65703S85BQG8	文件：311.56 Kbytes Page：27 Pages	256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 100 MHz (7.5 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/ 文件：311.56 Kbytes 页数：27 Pages	RENESAS 瑞萨	RENESAS
71V65703S85BQGI	文件：311.56 Kbytes Page：27 Pages	256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 100 MHz (7.5 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/ 文件：311.56 Kbytes 页数：27 Pages	RENESAS 瑞萨	RENESAS
71V65703S85BQGI8	文件：311.56 Kbytes Page：27 Pages	256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 100 MHz (7.5 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/ 文件：311.56 Kbytes 页数：27 Pages	RENESAS 瑞萨	RENESAS
71V65703S85BQI	文件：311.56 Kbytes Page：27 Pages	256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 100 MHz (7.5 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/ 文件：311.56 Kbytes 页数：27 Pages	RENESAS 瑞萨	RENESAS
71V65703S85BQI8	文件：311.56 Kbytes Page：27 Pages	256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 100 MHz (7.5 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/ 文件：311.56 Kbytes 页数：27 Pages	RENESAS 瑞萨	RENESAS
71V65703S85PFG	文件：311.56 Kbytes Page：27 Pages	256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 100 MHz (7.5 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/ 文件：311.56 Kbytes 页数：27 Pages	RENESAS 瑞萨	RENESAS
71V65703S85PFG8	文件：311.56 Kbytes Page：27 Pages	256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 100 MHz (7.5 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/ 文件：311.56 Kbytes 页数：27 Pages	RENESAS 瑞萨	RENESAS
71V65703S85PFGI	文件：311.56 Kbytes Page：27 Pages	256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 100 MHz (7.5 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/ 文件：311.56 Kbytes 页数：27 Pages	RENESAS 瑞萨	RENESAS
71V65703S85PFGI8	文件：311.56 Kbytes Page：27 Pages	256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 100 MHz (7.5 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/ 文件：311.56 Kbytes 页数：27 Pages	RENESAS 瑞萨	RENESAS

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供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市昂芯微科技有限公司	71V65703	IDT	23+	BGA	5107	所有报价以当天为准	询价
深圳市福田区亿兴成电子商行	71V65703	IDT		TQFP	222		询价
贸泽芯城（深圳）电子科技有限公司	71V65703	IDT	23+	BGA	3000	一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、	询价
深圳市科芯源微电子有限公司	71V65703	IDT	25+	BGA	996880	只做原装,欢迎来电资询	询价
深圳诚思涵科技有限公司	71V65703	IDT	24+	BGA	13234	只做原装公司现货库存	询价
深圳市澳亿芯电子科技有限公司	71V65703	IDT	24+	BGA	12000	原装正品有挂就有货	询价
深圳市诺美思科技有限公司	71V65703	IDT		原厂封装	9800	原装进口公司现货假一赔百	询价
深圳市华康联电子科技有限公司	71V65703	IDT	23+	BGA	98900	原厂原装正品现货!!	询价
深圳市一线半导体有限公司	71V65703S75PF	IDT	24+	QFP	67		询价
深圳市欧立现代科技有限公司	71V65703S85BG	IDT	24+	BGA	6980	原装现货,可开13%税票	询价

更多71V65703供应商更新时间2025-11-3 13:32:00

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