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71V35761

3.3V 128K x 36 Synchronous PipeLined Burst SRAM w/3.3V I/O

The 71V35761 3.3V CMOS SRAM is organized as 128K x 36. It contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V35761 can provide four cycles of data for a single address presented to the SRAM. High system speed 200MHz (3.1ns clock access time)\nLBO input selects interleaved or linear burst mode\nSelf-timed write cycle with global write control (GW), byte write\nenable (BWE), and byte writes (BWx)\n3.3V core power supply\nPower down controlled by ZZ input\n3.3V I/O\nOptional - Boundary Sca;

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71V35761S

128K x 36 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect

Features ◆ 128K x 36 memory configurations ◆ Supports high system speed: Commercial: – 200MHz 3.1ns clock access time Commercial and Industrial: – 183MHz 3.3ns clock access time – 166MHz 3.5ns clock access time ◆ LBO input selects interleaved or linear burst mode ◆ 3.3V core power supply

文件:319.72 Kbytes 页数:23 Pages

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71V35761S166PFG

128K x 36 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect

Features ◆ 128K x 36 memory configurations ◆ Supports high system speed: Commercial: – 200MHz 3.1ns clock access time Commercial and Industrial: – 183MHz 3.3ns clock access time – 166MHz 3.5ns clock access time ◆ LBO input selects interleaved or linear burst mode ◆ 3.3V core power supply

文件:319.72 Kbytes 页数:23 Pages

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71V35761S166PFG8

128K x 36 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect

Features ◆ 128K x 36 memory configurations ◆ Supports high system speed: Commercial: – 200MHz 3.1ns clock access time Commercial and Industrial: – 183MHz 3.3ns clock access time – 166MHz 3.5ns clock access time ◆ LBO input selects interleaved or linear burst mode ◆ 3.3V core power supply

文件:319.72 Kbytes 页数:23 Pages

RENESAS

瑞萨

71V35761S166PFGI

128K x 36 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect

Features ◆ 128K x 36 memory configurations ◆ Supports high system speed: Commercial: – 200MHz 3.1ns clock access time Commercial and Industrial: – 183MHz 3.3ns clock access time – 166MHz 3.5ns clock access time ◆ LBO input selects interleaved or linear burst mode ◆ 3.3V core power supply

文件:319.72 Kbytes 页数:23 Pages

RENESAS

瑞萨

71V35761S166PFGI8

128K x 36 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect

Features ◆ 128K x 36 memory configurations ◆ Supports high system speed: Commercial: – 200MHz 3.1ns clock access time Commercial and Industrial: – 183MHz 3.3ns clock access time – 166MHz 3.5ns clock access time ◆ LBO input selects interleaved or linear burst mode ◆ 3.3V core power supply

文件:319.72 Kbytes 页数:23 Pages

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71V35761S183PFG

128K x 36 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect

Features ◆ 128K x 36 memory configurations ◆ Supports high system speed: Commercial: – 200MHz 3.1ns clock access time Commercial and Industrial: – 183MHz 3.3ns clock access time – 166MHz 3.5ns clock access time ◆ LBO input selects interleaved or linear burst mode ◆ 3.3V core power supply

文件:319.72 Kbytes 页数:23 Pages

RENESAS

瑞萨

71V35761S183PFG8

128K x 36 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect

Features ◆ 128K x 36 memory configurations ◆ Supports high system speed: Commercial: – 200MHz 3.1ns clock access time Commercial and Industrial: – 183MHz 3.3ns clock access time – 166MHz 3.5ns clock access time ◆ LBO input selects interleaved or linear burst mode ◆ 3.3V core power supply

文件:319.72 Kbytes 页数:23 Pages

RENESAS

瑞萨

71V35761S183PFGI

128K x 36 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect

Features ◆ 128K x 36 memory configurations ◆ Supports high system speed: Commercial: – 200MHz 3.1ns clock access time Commercial and Industrial: – 183MHz 3.3ns clock access time – 166MHz 3.5ns clock access time ◆ LBO input selects interleaved or linear burst mode ◆ 3.3V core power supply

文件:319.72 Kbytes 页数:23 Pages

RENESAS

瑞萨

71V35761S183PFGI8

128K x 36 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect

Features ◆ 128K x 36 memory configurations ◆ Supports high system speed: Commercial: – 200MHz 3.1ns clock access time Commercial and Industrial: – 183MHz 3.3ns clock access time – 166MHz 3.5ns clock access time ◆ LBO input selects interleaved or linear burst mode ◆ 3.3V core power supply

文件:319.72 Kbytes 页数:23 Pages

RENESAS

瑞萨

详细参数

  • 型号:

    71V35761

  • 功能描述:

    静态随机存取存储器

  • RoHS:

  • 制造商:

    Cypress Semiconductor

  • 存储容量:

    16 Mbit

  • 组织:

    1 M x 16

  • 访问时间:

    55 ns

  • 电源电压-最大:

    3.6 V

  • 电源电压-最小:

    2.2 V

  • 最大工作电流:

    22 uA

  • 最大工作温度:

    + 85 C

  • 最小工作温度:

    - 40 C

  • 安装风格:

    SMD/SMT

  • 封装/箱体:

    TSOP-48

  • 封装:

    Tray

供应商型号品牌批号封装库存备注价格
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24+
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5000
全现原装公司现货
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IDT
23+
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830
专做原装正品,假一罚百!
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IDT
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645
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IDT
0444+
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1000
原装正品
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IDT
24+
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20000
全新原厂原装,进口正品现货,正规渠道可含税!!
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Integrated Device Technology (
2022+
1
全新原装 货期两周
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IDT, Integrated Device Technol
21+
256-LBGA
5280
进口原装!长期供应!绝对优势价格(诚信经营
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更多71V35761供应商 更新时间2025-12-26 11:04:00