71V2546数据手册集成电路（IC）的存储器规格书PDF

描述 Description

The 71V2546 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V2546 has an on-chip burst counter. In the burst mode, it can provide four cycles of data for a single address presented to the SRAM.

特性 Features

High performance system speed - 150 MHz (3.8 ns Clock-to-Data Access)
ZBTTM Feature - No dead cycles between write and read cycles
Internally synchronized output buffer enable eliminates the need to control OE
Single R/W (READ/WRITE) control pin
Positive clock-edge triggered address, data, and control signal registers for fully pipelined applications
4-word burst capability (interleaved or linear)
Individual byte write (BW1 - BW4) control (May tie active)
Three chip enables for simple depth expansion
3.3V power supply (±5%), 2.5V I/O Supply (VDDQ)
Available in 100-pin TQFP and 119-pin BGA packages