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71V2546S	文件：279.06 Kbytes Page：22 Pages	128K x 36 3.3V Synchronous ZBT™ SRAM 2.5V I/O, Burst Counter Pipelined Outputs Features ◆128Kx36memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(READ/WRI	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司
71V2546S100BG	文件：279.06 Kbytes Page：22 Pages	128K x 36 3.3V Synchronous ZBT™ SRAM 2.5V I/O, Burst Counter Pipelined Outputs Features ◆128Kx36memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(READ/WRI	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司
71V2546S100BG8	文件：279.06 Kbytes Page：22 Pages	128K x 36 3.3V Synchronous ZBT™ SRAM 2.5V I/O, Burst Counter Pipelined Outputs Features ◆128Kx36memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(READ/WRI	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司
71V2546S100BGI	文件：279.06 Kbytes Page：22 Pages	128K x 36 3.3V Synchronous ZBT™ SRAM 2.5V I/O, Burst Counter Pipelined Outputs Features ◆128Kx36memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(READ/WRI	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司
71V2546S100BGI8	文件：279.06 Kbytes Page：22 Pages	128K x 36 3.3V Synchronous ZBT™ SRAM 2.5V I/O, Burst Counter Pipelined Outputs Features ◆128Kx36memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(READ/WRI	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司
71V2546S100PFG	文件：279.06 Kbytes Page：22 Pages	128K x 36 3.3V Synchronous ZBT™ SRAM 2.5V I/O, Burst Counter Pipelined Outputs Features ◆128Kx36memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(READ/WRI	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司
71V2546S100PFG8	文件：279.06 Kbytes Page：22 Pages	128K x 36 3.3V Synchronous ZBT™ SRAM 2.5V I/O, Burst Counter Pipelined Outputs Features ◆128Kx36memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(READ/WRI	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司
71V2546S133BG	文件：279.06 Kbytes Page：22 Pages	128K x 36 3.3V Synchronous ZBT™ SRAM 2.5V I/O, Burst Counter Pipelined Outputs Features ◆128Kx36memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(READ/WRI	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司
71V2546S133BG8	文件：279.06 Kbytes Page：22 Pages	128K x 36 3.3V Synchronous ZBT™ SRAM 2.5V I/O, Burst Counter Pipelined Outputs Features ◆128Kx36memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(READ/WRI	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司
71V2546S133BGI	文件：279.06 Kbytes Page：22 Pages	128K x 36 3.3V Synchronous ZBT™ SRAM 2.5V I/O, Burst Counter Pipelined Outputs Features ◆128Kx36memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(READ/WRI	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司
71V2546S133BGI8	文件：279.06 Kbytes Page：22 Pages	128K x 36 3.3V Synchronous ZBT™ SRAM 2.5V I/O, Burst Counter Pipelined Outputs Features ◆128Kx36memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(READ/WRI	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司
71V2546S133PFG	文件：279.06 Kbytes Page：22 Pages	128K x 36 3.3V Synchronous ZBT™ SRAM 2.5V I/O, Burst Counter Pipelined Outputs Features ◆128Kx36memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(READ/WRI	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司
71V2546S133PFG8	文件：279.06 Kbytes Page：22 Pages	128K x 36 3.3V Synchronous ZBT™ SRAM 2.5V I/O, Burst Counter Pipelined Outputs Features ◆128Kx36memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(READ/WRI	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司
71V2546S150BG	文件：279.06 Kbytes Page：22 Pages	128K x 36 3.3V Synchronous ZBT™ SRAM 2.5V I/O, Burst Counter Pipelined Outputs Features ◆128Kx36memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(READ/WRI	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司
71V2546S150BG8	文件：279.06 Kbytes Page：22 Pages	128K x 36 3.3V Synchronous ZBT™ SRAM 2.5V I/O, Burst Counter Pipelined Outputs Features ◆128Kx36memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(READ/WRI	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司
71V2546S150PFG	文件：279.06 Kbytes Page：22 Pages	128K x 36 3.3V Synchronous ZBT™ SRAM 2.5V I/O, Burst Counter Pipelined Outputs Features ◆128Kx36memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(READ/WRI	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司
71V2546S150PFG8	文件：279.06 Kbytes Page：22 Pages	128K x 36 3.3V Synchronous ZBT™ SRAM 2.5V I/O, Burst Counter Pipelined Outputs Features ◆128Kx36memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(READ/WRI	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司
71V2546S100BGG	文件：733.03 Kbytes Page：21 Pages	3.3V Synchronous ZBT SRAM	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司
71V2546S100BGG8	文件：733.03 Kbytes Page：21 Pages	3.3V Synchronous ZBT SRAM	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司
71V2546S100BGGI	文件：733.03 Kbytes Page：21 Pages	3.3V Synchronous ZBT SRAM	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司

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产品属性

产品编号：
71V2546S100BG
制造商：
Renesas Electronics America Inc
类别：
集成电路（IC） > 存储器
包装：
托盘
存储器类型：
易失
存储器格式：
SRAM
技术：
SRAM - 同步，SDR（ZBT）
存储容量：
4.5Mb（128K x 36）
存储器接口：
并联
电压 - 供电：
3.135V ~ 3.465V
工作温度：
0°C ~ 70°C（TA）
安装类型：
表面贴装型
封装/外壳：
119-BGA
供应商器件封装：
119-PBGA（14x22）
描述：
IC SRAM 4.5MBIT PARALLEL 119PBGA

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市毅创辉电子科技有限公司	71V2546S100BG	RENESAS(瑞萨)	23+	119-PBGA (14.00L X 22.00W X 1.	840	全新、原装	询价
深圳市斌腾达科技有限公司	71V2546S100BG	IDT, Integrated Device Technol	21+	60-TFBGA	5280	进口原装!长期供应!绝对优势价格(诚信经营	询价
瀚佳科技(深圳)有限公司	71V2546S100BG	IDT, Integrated Device Technol	21+	119-PBGA(14x22)	56200	一级代理/放心采购	询价
深圳市艾宇欣科技有限公司	71V2546S100BG	IDT	1931+	N/A	1186	加我qq或微信，了解更多详细信息,体验一站式购物	询价
艾睿国际（香港）有限公司	71V2546S100BG	RENESAS(瑞萨)/IDT	2117+	PBGA-119(14x22)	315000	84个/托盘一级代理专营品牌!原装正品,优势现货,长	询价
深圳市科雨电子有限公司	71V2546S100BG	IDT	20+	BGA-119	168	就找我吧!--邀您体验愉快问购元件!	询价
讯运(深圳/上海)电子有限公司	71V2546S100BG	RENESAS(瑞萨)/IDT	2021+	PBGA-119(14x22)	499		询价
万三科技(深圳)有限公司	71V2546S100BG	RENESAS(瑞萨电子)	22+	NA	500000	万三科技,秉承原装,购芯无忧	询价
深圳市易讯博科技有限公司	71V2546S100BG	IDT	22+	NA	1186	加我QQ或微信咨询更多详细信息,	询价
深圳市大联智电子有限公司	71V2546S100BG	IDT, Integrated Device Techno	2022+	119-PBGA(14x22)	7300	原装现货	询价

更多71V2546供应商更新时间2024-4-19 15:36:00

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