丝印：71V；0.6% ACCURACY LOW NOISE 300mA LDO REGULATOR

FEATURES  Supply Current Typ. 18A  Standby Current Typ. 0.1A  Dropout Voltage Typ. 0.13V (IOUT150mA, VOUT

文件：567.04 Kbytes 页数：33 Pages

NISSHINBO

日清纺微电子

3.3V CMOS Static RAM 1 Meg (64K x 16-Bit)

Description The IDT71V016 is a 1,048,576-bit high-speed Static RAM organized as 64K x 16. It is fabricated using IDT’s high-perfomance, high-reliability CMOS technology. This state-of-the-art technology, combined with inno vative circuit design techniques, provides a cost-effective solution for

文件：100.78 Kbytes 页数：9 Pages

IDT

3.3V CMOS Static RAM 1 Meg (64K x 16-Bit)

Features ◆ 64K x 16 advanced high-speed CMOS Static RAM ◆ Equal access and cycle times — Commercial: 10/12/15/20ns — Industrial: 10/12/15/20ns ◆ One Chip Select plus one Output Enable pin ◆ Bidirectional data inputs and outputs directly LVTTL-compatible ◆ Low power consumption via chip des

文件：210.22 Kbytes 页数：11 Pages

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3.3V CMOS Static RAM 1 Meg (64K x 16-Bit)

Features ◆ 64K x 16 advanced high-speed CMOS Static RAM ◆ Equal access and cycle times — Commercial: 10/12/15/20ns — Industrial: 10/12/15/20ns ◆ One Chip Select plus one Output Enable pin ◆ Bidirectional data inputs and outputs directly LVTTL-compatible ◆ Low power consumption via chip des

文件：210.22 Kbytes 页数：11 Pages

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瑞萨

3.3V CMOS Static RAM 1 Meg (64K x 16-Bit)

Features ◆ 64K x 16 advanced high-speed CMOS Static RAM ◆ Equal access and cycle times — Commercial: 10/12/15/20ns — Industrial: 10/12/15/20ns ◆ One Chip Select plus one Output Enable pin ◆ Bidirectional data inputs and outputs directly LVTTL-compatible ◆ Low power consumption via chip des

文件：210.22 Kbytes 页数：11 Pages

RENESAS

瑞萨

3.3V CMOS Static RAM 1 Meg (64K x 16-Bit)

Features ◆ 64K x 16 advanced high-speed CMOS Static RAM ◆ Equal access and cycle times — Commercial: 10/12/15/20ns — Industrial: 10/12/15/20ns ◆ One Chip Select plus one Output Enable pin ◆ Bidirectional data inputs and outputs directly LVTTL-compatible ◆ Low power consumption via chip des

文件：210.22 Kbytes 页数：11 Pages

RENESAS

瑞萨

3.3V CMOS Static RAM 1 Meg (64K x 16-Bit)

Features ◆ 64K x 16 advanced high-speed CMOS Static RAM ◆ Equal access and cycle times — Commercial: 10/12/15/20ns — Industrial: 10/12/15/20ns ◆ One Chip Select plus one Output Enable pin ◆ Bidirectional data inputs and outputs directly LVTTL-compatible ◆ Low power consumption via chip des

文件：210.22 Kbytes 页数：11 Pages

RENESAS

瑞萨

3.3V CMOS Static RAM 1 Meg (64K x 16-Bit)

Features ◆ 64K x 16 advanced high-speed CMOS Static RAM ◆ Equal access and cycle times — Commercial: 10/12/15/20ns — Industrial: 10/12/15/20ns ◆ One Chip Select plus one Output Enable pin ◆ Bidirectional data inputs and outputs directly LVTTL-compatible ◆ Low power consumption via chip des

文件：210.22 Kbytes 页数：11 Pages

RENESAS

瑞萨

3.3V CMOS Static RAM 1 Meg (64K x 16-Bit)

Features ◆ 64K x 16 advanced high-speed CMOS Static RAM ◆ Equal access and cycle times — Commercial: 10/12/15/20ns — Industrial: 10/12/15/20ns ◆ One Chip Select plus one Output Enable pin ◆ Bidirectional data inputs and outputs directly LVTTL-compatible ◆ Low power consumption via chip des

文件：210.22 Kbytes 页数：11 Pages

RENESAS

瑞萨

3.3V CMOS Static RAM 1 Meg (64K x 16-Bit)

Features ◆ 64K x 16 advanced high-speed CMOS Static RAM ◆ Equal access and cycle times — Commercial: 10/12/15/20ns — Industrial: 10/12/15/20ns ◆ One Chip Select plus one Output Enable pin ◆ Bidirectional data inputs and outputs directly LVTTL-compatible ◆ Low power consumption via chip des

文件：210.22 Kbytes 页数：11 Pages

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瑞萨