6S

型号：BAS21HY；Package：SOT-23；Switching Diode

Features Highreliability Smallmoldtype Highspeedswitching Highcurrentoverloadcapacity Application Generalrectification Structure Epitaxialplanar

6S

型号：BAS21HYFH；Package：SOT-23；Switching Diode

Features Highreliability Smallmoldtype Highspeedswitching Highcurrentoverloadcapacity Application Generalrectification Structure Epitaxialplanar

6S

型号：BC807-16H；Package：TO-236AB；45 V, 500 mA PNP general-purpose transistors

Featuresandbenefits Threecurrentgainselections High-temperatureapplicationsupto175°C AEC-Q101qualified

6S

型号：BZX38450-C2V0；Package：SC-76；Low-current voltage regulator diodes

1.Generaldescription Low-currentvoltageregulatordiodesinasmallSOD323(SC-76)Surface-MountedDevice(SMD) plasticpackage. 2.Featuresandbenefits •Totalpowerdissipation:≤300mW •Toleranceseries:approximately±5 •Workingvoltagerange:nominal1.8Vto10V •Specifie

6S

型号：BZX38450-C2V0-Q；Package：SOD323；Low-current voltage regulator diodes

1.Generaldescription Low-currentvoltageregulatordiodesinasmallSOD323(SC-76)Surface-MountedDevice(SMD) plasticpackage. 2.Featuresandbenefits •Totalpowerdissipation:≤300mW •Toleranceseries:approximately±5 •Workingvoltagerange:nominal1.8Vto10V •Specifie

6S

型号：CPDVR105V0UA-HF；Package：DFN2510-10L；SMD ESD Protection Diode

Features -Ultra-lowcapacitance. -IEC61000-4-2(Air):±19kV IEC61000-4-2(Contact):±16kV IEC61000-4-5(Surge):3A(8/20μs) -Flow-throughdesign. -Protectsfourhigh-speedlines. -Lowcapacitance:

6S

型号：MMBFJ113；Package：SOT-233L；N-Channel Switch

Features •ThisDeviceisDesignedforLowLevelAnalogSwitching,Sample andHoldCircuitsandChopperStabilizedAmplifiers •SourcedfromProcess51 •Source&DrainareInterchangeable •ThesearePb−FreeDevices

6S

型号：MMBFJ113；Package：SOT-23；N-Channel Switch

Features •Thisdeviceisdesignedforlowlevelanalogswitching, sampleandholdcircuitsandchopperstabilizedamplifiers •SourcedfromProcess51. •Source&Drainareinterchangeable.

6S

型号：NHUMD12；Package：SOT363；80 V, 100 mA NPN/PNP resistor-equipped double transistors

Featuresandbenefits •100mAoutputcurrentcapability •Highbreakdownvoltage •Built-inresistors •Simplifiescircuitdesign •Reducescomponentcount •Reducespickandplacecosts •AEC-Q101qualified

6S

型号：NHUMD12；Package：SC-88；80 V, 100 mA NPN/PNP resistor-equipped double transistors

1.Generaldescription NPN/PNPResistor-EquippeddoubleTransistor(RET)familyinaverysmallSOT363(SC-88) Surface-MountedDevice(SMD)plasticpackage. Table1.Productoverview TypenumberR1R2Package kΩkΩNexperiaJEITA NPN/NPN complement: PNP/PNP complement: NHUMD31010NHUMH