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6N135S1(TB)-V

8 PIN DIP HIGH SPEED 1Mbit/s TRANSISTOR

Description The 6N135, 6N136, EL4502 and EL4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over con

文件:981.69 Kbytes 页数:14 Pages

EVERLIGHT

台湾亿光

6N135S1(TB)-V

8 PIN DIP HIGH SPEED 1Mbit/s TRANSISTOR

Description The 6N135, 6N136, EL4502 and EL4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over con

文件:981.69 Kbytes 页数:14 Pages

EVERLIGHT

台湾亿光

6N135SDM

8-Pin DIP High Speed Transistor Optocouplers

Description The 6N135M, 6N136M, HCPL4503M, HCPL2530M, and HCPL2531M optocouplers consist of an AlGaAs LED optically coupled to a high speed photodetector transistor for each channel. A separate connection for the bias of the photodiode improves the speed by several orders of magnitude over co

文件:522.9 Kbytes 页数:16 Pages

ONSEMI

安森美半导体

6N135SDVM

8-Pin DIP High Speed Transistor Optocouplers

Description The 6N135M, 6N136M, HCPL4503M, HCPL2530M, and HCPL2531M optocouplers consist of an AlGaAs LED optically coupled to a high speed photodetector transistor for each channel. A separate connection for the bias of the photodiode improves the speed by several orders of magnitude over co

文件:522.9 Kbytes 页数:16 Pages

ONSEMI

安森美半导体

6N135SL

1Mbit/s High Speed Phototransistor Optocoupler

Description The 6N135, 6N136, CT4502 and CT4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over con

文件:1.05228 Mbytes 页数:16 Pages

CTMICRO

6N135SLT1

1Mbit/s High Speed Phototransistor Optocoupler

Description The 6N135, 6N136, CT4502 and CT4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over con

文件:1.05228 Mbytes 页数:16 Pages

CTMICRO

6N135SLT2

1Mbit/s High Speed Phototransistor Optocoupler

Description The 6N135, 6N136, CT4502 and CT4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over con

文件:1.05228 Mbytes 页数:16 Pages

CTMICRO

6N135SM

8-Pin DIP High Speed Transistor Optocouplers

Description The 6N135M, 6N136M, HCPL4503M, HCPL2530M, and HCPL2531M optocouplers consist of an AlGaAs LED optically coupled to a high speed photodetector transistor for each channel. A separate connection for the bias of the photodiode improves the speed by several orders of magnitude over co

文件:522.9 Kbytes 页数:16 Pages

ONSEMI

安森美半导体

6N135ST1

1Mbit/s High Speed Phototransistor Optocoupler

Description The 6N135, 6N136, CT4502 and CT4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over con

文件:1.05228 Mbytes 页数:16 Pages

CTMICRO

6N135ST2

1Mbit/s High Speed Phototransistor Optocoupler

Description The 6N135, 6N136, CT4502 and CT4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over con

文件:1.05228 Mbytes 页数:16 Pages

CTMICRO

详细参数

  • 型号:

    6N135S

  • 功能描述:

    高速光耦合器 High Speed 1MBd Transistor Output

  • RoHS:

  • 制造商:

    Avago Technologies

  • 最大正向二极管电压:

    1.75 V

  • 最大反向二极管电压:

    5 V

  • 最大功率耗散:

    40 mW

  • 最大工作温度:

    +125 C

  • 最小工作温度:

    - 40 C

  • 封装/箱体:

    SOIC-5

  • 封装:

    Tube

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更多6N135S供应商 更新时间2026-1-17 18:10:00