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6N135S

LITE-ON TECHNOLOGY CORP

DESCRIPTION These diode-transistor photocouplers consist of an AlGaAs LED optically coupled to high speed photodetector transistor. Separate connections for the bias of the photodiode bias and output transistor collector increase the speed up to several times that of a conventional phototransist

文件:241.12 Kbytes 页数:10 Pages

TENAND

腾恩科技

6N135S

1Mbit/s High Speed Phototransistor Optocoupler

Description The 6N135, 6N136, CT4502 and CT4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over con

文件:1.05228 Mbytes 页数:16 Pages

CTMICRO

6N135S

High Speed Transistor Optocouplers

文件:592.51 Kbytes 页数:12 Pages

FAIRCHILD

仙童半导体

6N135S

HIGH SPEED TRANSISTOR OPTOCOUPLERS

文件:577.65 Kbytes 页数:12 Pages

FAIRCHILD

仙童半导体

6N135S(TA)-V

8 PIN DIP HIGH SPEED 1Mbit/s TRANSISTOR

Description The 6N135, 6N136, EL4502 and EL4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over con

文件:981.69 Kbytes 页数:14 Pages

EVERLIGHT

台湾亿光

6N135S(TA)-V

8 PIN DIP HIGH SPEED 1Mbit/s TRANSISTOR

Description The 6N135, 6N136, EL4502 and EL4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over con

文件:981.69 Kbytes 页数:14 Pages

EVERLIGHT

台湾亿光

6N135S(TB)-V

8 PIN DIP HIGH SPEED 1Mbit/s TRANSISTOR

Description The 6N135, 6N136, EL4502 and EL4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over con

文件:981.69 Kbytes 页数:14 Pages

EVERLIGHT

台湾亿光

6N135S(TB)-V

8 PIN DIP HIGH SPEED 1Mbit/s TRANSISTOR

Description The 6N135, 6N136, EL4502 and EL4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over con

文件:981.69 Kbytes 页数:14 Pages

EVERLIGHT

台湾亿光

6N135S1(TA)-V

8 PIN DIP HIGH SPEED 1Mbit/s TRANSISTOR

Description The 6N135, 6N136, EL4502 and EL4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over con

文件:981.69 Kbytes 页数:14 Pages

EVERLIGHT

台湾亿光

6N135S1(TA)-V

8 PIN DIP HIGH SPEED 1Mbit/s TRANSISTOR

Description The 6N135, 6N136, EL4502 and EL4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over con

文件:981.69 Kbytes 页数:14 Pages

EVERLIGHT

台湾亿光

详细参数

  • 型号:

    6N135S

  • 功能描述:

    高速光耦合器 High Speed 1MBd Transistor Output

  • RoHS:

  • 制造商:

    Avago Technologies

  • 最大正向二极管电压:

    1.75 V

  • 最大反向二极管电压:

    5 V

  • 最大功率耗散:

    40 mW

  • 最大工作温度:

    +125 C

  • 最小工作温度:

    - 40 C

  • 封装/箱体:

    SOIC-5

  • 封装:

    Tube

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更多6N135S供应商 更新时间2026-1-17 10:03:00