首页 >6N100-C>规格书列表

零件编号下载&订购功能描述制造商&上传企业LOGO

6N100F

PowerMOSFETs

Features ●RFcapableMOSFETs ●Doublemetalprocessforlowgateresistance ●Ruggedpolysilicongatecellstructure ●UnclampedInductiveSwitching(UIS)rated ●Lowpackageinductance -easytodriveandtoprotect ●Fastintrinsicrectifier Applications ●DC-DCconverters ●Switch

IXYS

IXYS Integrated Circuits Division

AP6N100H

N-CHANNELENHANCEMENTMODEPOWERMOSFET

A-POWERAdvanced Power Electronics Corp.

富鼎先進電子富鼎先進電子股份有限公司

AP6N100J

N-CHANNELENHANCEMENTMODEPOWERMOSFET

A-POWERAdvanced Power Electronics Corp.

富鼎先進電子富鼎先進電子股份有限公司

AP6N100JV

N-CHANNELENHANCEMENTMODEPOWERMOSFET

A-POWERAdvanced Power Electronics Corp.

富鼎先進電子富鼎先進電子股份有限公司

IXFH6N100

HIPERFETPowerMOSFTETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Integrated Circuits Division

IXFH6N100

HiPerFETPowerMOSFETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Integrated Circuits Division

IXFH6N100

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=6A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=2.0Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXFH6N100F

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=6A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.9Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXFH6N100F

PowerMOSFETs

Features ●RFcapableMOSFETs ●Doublemetalprocessforlowgateresistance ●Ruggedpolysilicongatecellstructure ●UnclampedInductiveSwitching(UIS)rated ●Lowpackageinductance -easytodriveandtoprotect ●Fastintrinsicrectifier Applications ●DC-DCconverters ●Switch

IXYS

IXYS Integrated Circuits Division

IXFH6N100Q

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=6A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.9Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXFH6N100Q

HiPerFETPowerMOSFETsQ-Class

Features ●IXYSadvancedlowQgprocess ●Lowgatechargeandcapacitances -easiertodrive -fasterswitching ●Internationalstandardpackages ●LowRDS(on) ●UnclampedInductiveSwitching(UIS)rated ●MoldingepoxiesmeetUL94V-0 flammabilityclassification Advantages ●

IXYS

IXYS Integrated Circuits Division

IXFM6N100

HiPerFETPowerMOSFETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Integrated Circuits Division

IXFM6N100

HIPERFETPowerMOSFTETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Integrated Circuits Division

IXFT6N100F

PowerMOSFETs

Features ●RFcapableMOSFETs ●Doublemetalprocessforlowgateresistance ●Ruggedpolysilicongatecellstructure ●UnclampedInductiveSwitching(UIS)rated ●Lowpackageinductance -easytodriveandtoprotect ●Fastintrinsicrectifier Applications ●DC-DCconverters ●Switch

IXYS

IXYS Integrated Circuits Division

IXFT6N100Q

HiPerFETPowerMOSFETsQ-Class

Features ●IXYSadvancedlowQgprocess ●Lowgatechargeandcapacitances -easiertodrive -fasterswitching ●Internationalstandardpackages ●LowRDS(on) ●UnclampedInductiveSwitching(UIS)rated ●MoldingepoxiesmeetUL94V-0 flammabilityclassification Advantages ●

IXYS

IXYS Integrated Circuits Division

MTH6N100

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=6A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MTV6N100E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=6A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.5Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MTV6N100E

PowerFieldEffectTransistor

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MTV6N100E

TMOSPOWERFET6.0AMPERES1000VOLTSRDS(on)=1.5OHM

TMOSE-FET™ PowerFieldEffectTransistorD3PAKforSurfaceMount N–ChannelEnhancement–ModeSiliconGate TheD3PAKpackagehasthecapabilityofhousingthelargestchipsizeofanystandard,plastic,surfacemountpowersemiconductor.Thisallowsittobeusedinapplicationsthatrequiresur

MotorolaMotorola, Inc

摩托罗拉

MTW6N100

TMOSPOWERFET6.0AMPERES1000VOLTSRDS(on)=1.5OHM

TMOSE−FETPowerFieldEffectTransistorTO-247withIsolatedMountingHole N–ChannelEnhancement–ModeSiliconGate ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage–blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedTMO

MotorolaMotorola, Inc

摩托罗拉

供应商型号品牌批号封装库存备注价格
IXYS
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
UTC
23/22+
TO252
6000
20年老代理.原厂技术支持
询价
UTC/友顺
SOT-223SOP8TO252
22+
6000
十年配单,只做原装
询价
UCT
2021+
SOT22-3
5000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
询价
UTC/友顺
20+
SOT-223
32500
现货很近!原厂很远!只做原装
询价
UTC
23+
SOT-223
76456
原装正品现货
询价
UTC/友顺
2020+
SOT223
100000
原装现货
询价
UTC/友顺
SOT-223
198589
假一罚十原包原标签常备现货!
询价
UTC/友顺
22+
SOT-223
9600
原装现货,优势供应,支持实单!
询价
UTC/友顺
23+
SOT-223
50000
全新原装正品现货,支持订货
询价
更多6N100-C供应商 更新时间2024-6-24 9:00:00