丝印：6E；Package：SOT-323；NPN general purpose transistor

DESCRIPTION NPN general purpose transistors (see “Simplified outline, symbol and pinning” for package details). FEATURES • Available in SOT323 (SC-70) and SOT346 (SC-59) packages • Available in three different DC current gain versions (Q, R, S). APPLICATIONS • General purpose

文件：48.28 Kbytes 页数：8 Pages

PHI

飞利浦

丝印：6E；Package：SOT-323；NPN general purpose transistors; 50 V, 100 mA

DESCRIPTION NPN general purpose transistors (see “Simplified outline, symbol and pinning” for package details). FEATURES • Available in SOT323 (SC-70) and SOT346 (SC-59) packages • Available in three different DC current gain versions (Q, R, S). APPLICATIONS • General purpose switching and a

文件：131.56 Kbytes 页数：8 Pages

恩XP

丝印：6E；Package：SOD-323；PLASTIC-ENCAPSULATE ZENER DIODE

VOLTAGE 2.0~75 Volts POWER 200.0 mW FEATURES • Low Zener Impedance • Power Dissipation of 200mW • High Stability and High Reliability • Zener Voltage Tolerance: ± 5 MECHANICAL DATA • Case: SOD-123 Small Outline Plastic Package • Epoxy UL: 94V-0 • Polarity: Color band denotes cathode end

文件：1.05048 Mbytes 页数：6 Pages

NIUHANG

纽航电子

丝印：6E；Package：SC-89；Bias Resistor Transistors

Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a mono

文件：608.57 Kbytes 页数：16 Pages

FS

丝印：6E；Package：SC-89；Bias Resistor Transistors

Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a mono

文件：774.3 Kbytes 页数：12 Pages

LRC

乐山无线电

丝印：6E；Package：SOD-123F；SILICON PLANAR ZENER DIODES

Features • Total power dissipation: max. 500 mW • Small plastic package suitable for surface mounted design • Tolerance approximately ± 5

文件：272.29 Kbytes 页数：4 Pages

SEMTECH_ELEC

先之科半导体

丝印：6E；Silicon Planar Zener Diodes

FEATURES • Total power dissipation: Max. 500mW. • Wide zener reverse voltage range 2.0V to 75V. • Small plastic package suitable for surface mounted design. • Tolerance approximately±5

文件：776.59 Kbytes 页数：2 Pages

JUXING

广东钜兴电子

丝印：6E；Package：SOT-23；P-Channel General Purpose Amplifier

P-Channel General Purpose Amplifier This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. Sourced from Process 89.

文件：115.95 Kbytes 页数：5 Pages

Fairchild

仙童半导体

丝印：6E；Package：SOT-23；P-Channel General Purpose Amplifier

P-Channel General Purpose Amplifier This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. Sourced from Process 89.

文件：120.6 Kbytes 页数：5 Pages

Fairchild

仙童半导体

丝印：6E；Package：US6；Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process)

Switching, Inverter Circuit, Interface Circuit and Driver Circuit ● AEC-Q101 Qualified (Note1) ● Including two devices in US6 (ultra super mini type with 6 leads) ● With built-in bias resistors ● Simplify circuit design ● Reduce a quantity of parts and manufacturing process and miniaturize eq

文件：152.77 Kbytes 页数：6 Pages

TOSHIBA

东芝