MM1Z51

Marking：6C；Silicon Planar Zener Diodes

FEATURES •Totalpowerdissipation:Max.500mW. •Widezenerreversevoltagerange2.0Vto75V. •Smallplasticpackagesuitableforsurfacemounteddesign. •Toleranceapproximately±5

MM1Z51

Marking：6C；Package：SOD-123F；SILICON PLANAR ZENER DIODES

Features •Totalpowerdissipation:max.500mW •Smallplasticpackagesuitableforsurfacemounteddesign •Toleranceapproximately±5

NHUMB1

Marking：6C；Package：SOT363；80 V, 100 mA PNP/PNP resistor-equipped double transistors

Featuresandbenefits •100mAoutputcurrentcapability •Highbreakdownvoltage •Built-inresistors •Simplifiescircuitdesign •Reducescomponentcount •Reducespickandplacecosts •AEC-Q101qualified

NHUMB1

Marking：6C；Package：SC-88；80 V, 100 mA PNP/PNP resistor-equipped double transistors

1.Generaldescription PNP/PNPResistor-EquippeddoubleTransistor(RET)familyinaverysmallSOT363(SC-88) Surface-MountedDevice(SMD)plasticpackage. Table1.Productoverview TypenumberR1R2Package kΩkΩNexperiaJEITA NPN/NPN complement: NPN/PNP complement: NHUMB111010NHUM

PDTA123EEF

Marking：6C；Package：SC-89；PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ

FEATURES •Built-inbiasresistors •Simplifiedcircuitdesign •Reductionofcomponentcount •Reducedpickandplacecosts. APPLICATIONS •Generalpurposeswitchingandamplification •Inverterandinterfacecircuits •Circuitdriver.

PDTA123EEF

Marking：6C；Package：SOT490；PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ

FEATURES •Built-inbiasresistors •Simplifiedcircuitdesign •Reductionofcomponentcount •Reducedpickandplacecosts. APPLICATIONS •Generalpurposeswitchingandamplification •Inverterandinterfacecircuits •Circuitdriver. DESCRIPTION PNPresistor-equippedtransistor(see“Simplif

PESD2CANFD27V-QC

Marking：6C；Package：DFN1412D-3；ESD protection for In-vehicle networks

1.Generaldescription ESDprotectiondeviceinanultrasmallDFN1412D-3(SOT8009)leadlessSurface-MountedDevice (SMD)plasticpackagewithsidewettableflanksdesignedtoprotecttwoautomotiveIn-vehicle networkbuslinesfromthedamagecausedbyElectroStaticdischarge(ESD)andothert

PESD2CANFD27VQC-Q

Marking：6C；Package：DFN1412D-3；ESD protection for in-vehicle networks

1.Generaldescription ESDprotectiondeviceinanultrasmallDFN1412D-3(SOT8009)leadlessSurface-MountedDevice (SMD)plasticpackagewithsidewettableflanks,designedtoprotecttwoautomotivein-vehicle networkbuslinesfromthedamagecausedbyElectroStaticDischarge(ESD)andother

SN7002W

Marking：6C；Package：SOT-323；We declare that the material of product compliance with RoHS requirements and Halogen Free.

FEATURES Wedeclarethatthematerialofproductcompliancewith RoHSrequirementsandHalogenFree. ESDProtected:1000V

UPC8179TK-E2

Marking：6C；BIPOLAR ANALOG INTEGRATED CIRCUIT

FEATURES •Lowcurrentconsumption:ICC=4.0mATYP.@VCC=3.0V •Supplyvoltage:VCC=2.4to3.3V •Excellentisolation:ISL=43.0dBTYP.@f=1.0GHz ISL=42.0dBTYP.@f=1.9GHz ISL=42.0dBTYP.@f=2.4GHz •Powergain:GP=13.5dBTYP.@f=1.0GHz GP=15.5dBT