6.35mm Pitch Beau PCB Tri-Barrier Terminal Strip, without Mounting Ends

文件：34.56 Kbytes 页数：2 Pages

MOLEX

莫仕

Bottom-side cooled 650 V E-mode GaN transistor

Features • 650 V enhancement mode power transistor • Bottom-side cooled configuration • RDS(on) = 100 mΩ • IDS(max) = 15 A • Ultra-low FOM die • Low inductance GaNPX® package • Simple gate drive requirements (0 V to 6 V) • Transient tolerant gate drive (-20 V / +10 V) • Very high switchin

文件：975.19 Kbytes 页数：14 Pages

GAN