638M-SERIES

638M Series D-Sub Connectors | Machined Pins | High Density | 0.090 (2.29mm) Contact Spacing X 0.078(1.98mm) Row Spacing | Vertical | Receptacle

Features HighDensityWithMachinedContacts 0.090(2.29mm)ContactSpacingX0.078(1.98mm)RowSpacing PlugandReceptaclein15,26,44or62ContactSizes PinandSocketContactMatingDesignwithP.C.TailTermination MetalShellProvidesEMI/RFIShielding,

638-SERIES

638SeriesD-SubConnectors|VerticalHighDensity|PCBMount|MetalBody|Receptacle

Features PlugandReceptaclein15,26,44,62or78ContactSizes PinandSocketContactMatingDesignwithP.C.TailTermination MetalShellProvidesEMI/RFIShielding,PlugShellIndentsprovideGroundingandAdditionalMatingRetention GroundingFeaturesincludeBoardlockforExcep

BC638

COMPLEMENTARYSILICONTRANSISTORS

BC638

PNPEpitaxialSiliconTransistor

BC638

PNPEPITAXIALSILICONTRANSISTOR

SWITCHINGANDAMPLIFIERAPPLICATIONS •ComplementtoBC635/637/639

BC638

PNPSiliconAFTransistors(HighcurrentgainHighcollectorcurrent)

PNPSiliconAFTransistors ●Highcurrentgain ●Highcollectorcurrent ●Lowcollector-emittersaturationvoltage ●Complementarytypes:BC635,BC637,BC639(NPN)

BC638

PNPmediumpowertransistors

DESCRIPTION PNPmediumpowertransistorinaTO-92;SOT54plasticpackage.NPcomplements:BC635,BC637andBC639. FEATURES •Highcurrent(max.1A) •Lowvoltage(max.80V). APPLICATIONS •Audioandvideoamplifiers.

BC638

HighCurrentTransistors(PNPSilicon)

HighCurrentTransistorsPNPSilicon

BC638

HighCurrentTransistors

HighCurrentTransistorsPNPSilicon

BC638

EPITAXIALPLANARPNPTRANSISTOR(HIGHCURRENTTRANSISTORS)

HIGHCURRENTTRANSISTORS. FEATURES •ComplementarytoBC637.