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IC61LV6416-10B	文件：95.44 Kbytes Page：9 Pages	64Kx16HightSpeedSRAMwith3.3V DESCRIPTION TheICSIIC61LV6416isahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswithl	ICSI 矽成	ICSI
IC61LV6416-10BI	文件：95.44 Kbytes Page：9 Pages	64Kx16HightSpeedSRAMwith3.3V DESCRIPTION TheICSIIC61LV6416isahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswithl	ICSI 矽成	ICSI
IC61LV6416-10K	文件：95.44 Kbytes Page：9 Pages	64Kx16HightSpeedSRAMwith3.3V DESCRIPTION TheICSIIC61LV6416isahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswithl	ICSI 矽成	ICSI
IC61LV6416-10KI	文件：95.44 Kbytes Page：9 Pages	64Kx16HightSpeedSRAMwith3.3V DESCRIPTION TheICSIIC61LV6416isahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswithl	ICSI 矽成	ICSI
IC61LV6416-10T	文件：95.44 Kbytes Page：9 Pages	64Kx16HightSpeedSRAMwith3.3V DESCRIPTION TheICSIIC61LV6416isahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswithl	ICSI 矽成	ICSI
IC61LV6416-10TI	文件：95.44 Kbytes Page：9 Pages	64Kx16HightSpeedSRAMwith3.3V DESCRIPTION TheICSIIC61LV6416isahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswithl	ICSI 矽成	ICSI
IS61LV6416-10	文件：452.42 Kbytes Page：8 Pages	64KX16HIGHSPEEDCMOSSTATICRAMWITH3.3VSUPPLY DESCRIPTION TheICSIIS61LV6416isahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswithl	ICSI 矽成	ICSI
IS61LV6416-10B	文件：452.42 Kbytes Page：8 Pages	64KX16HIGHSPEEDCMOSSTATICRAMWITH3.3VSUPPLY DESCRIPTION TheICSIIS61LV6416isahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswithl	ICSI 矽成	ICSI
IS61LV6416-10BI	文件：452.42 Kbytes Page：8 Pages	64KX16HIGHSPEEDCMOSSTATICRAMWITH3.3VSUPPLY DESCRIPTION TheICSIIS61LV6416isahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswithl	ICSI 矽成	ICSI
IS61LV6416-10BI	文件：146.94 Kbytes Page：16 Pages	64Kx16HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY DESCRIPTION TheISSIIS61LV6416/IS61LV6416Lisahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas	ISSIIntegrated Silicon Solution Inc ISSI公司ISSI有限公司	ISSI
IS61LV6416-10BLI	文件：146.94 Kbytes Page：16 Pages	64Kx16HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY DESCRIPTION TheISSIIS61LV6416/IS61LV6416Lisahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas	ISSIIntegrated Silicon Solution Inc ISSI公司ISSI有限公司	ISSI
IS61LV6416-10K	文件：452.42 Kbytes Page：8 Pages	64KX16HIGHSPEEDCMOSSTATICRAMWITH3.3VSUPPLY DESCRIPTION TheICSIIS61LV6416isahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswithl	ICSI 矽成	ICSI
IS61LV6416-10K	文件：146.94 Kbytes Page：16 Pages	64Kx16HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY DESCRIPTION TheISSIIS61LV6416/IS61LV6416Lisahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas	ISSIIntegrated Silicon Solution Inc ISSI公司ISSI有限公司	ISSI
IS61LV6416-10KI	文件：452.42 Kbytes Page：8 Pages	64KX16HIGHSPEEDCMOSSTATICRAMWITH3.3VSUPPLY DESCRIPTION TheICSIIS61LV6416isahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswithl	ICSI 矽成	ICSI
IS61LV6416-10KI	文件：146.94 Kbytes Page：16 Pages	64Kx16HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY DESCRIPTION TheISSIIS61LV6416/IS61LV6416Lisahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas	ISSIIntegrated Silicon Solution Inc ISSI公司ISSI有限公司	ISSI
IS61LV6416-10KLI	文件：146.94 Kbytes Page：16 Pages	64Kx16HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY DESCRIPTION TheISSIIS61LV6416/IS61LV6416Lisahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas	ISSIIntegrated Silicon Solution Inc ISSI公司ISSI有限公司	ISSI
IS61LV6416-10T	文件：146.94 Kbytes Page：16 Pages	64Kx16HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY DESCRIPTION TheISSIIS61LV6416/IS61LV6416Lisahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas	ISSIIntegrated Silicon Solution Inc ISSI公司ISSI有限公司	ISSI
IS61LV6416-10T	文件：452.42 Kbytes Page：8 Pages	64KX16HIGHSPEEDCMOSSTATICRAMWITH3.3VSUPPLY DESCRIPTION TheICSIIS61LV6416isahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswithl	ICSI 矽成	ICSI
IS61LV6416-10TI	文件：452.42 Kbytes Page：8 Pages	64KX16HIGHSPEEDCMOSSTATICRAMWITH3.3VSUPPLY DESCRIPTION TheICSIIS61LV6416isahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswithl	ICSI 矽成	ICSI
IS61LV6416-10TI	文件：146.94 Kbytes Page：16 Pages	64Kx16HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY DESCRIPTION TheISSIIS61LV6416/IS61LV6416Lisahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas	ISSIIntegrated Silicon Solution Inc ISSI公司ISSI有限公司	ISSI

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供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市佳鑫美电子科技有限公司	61LV6416-10TL	ISSI	22+	TSOP	2987	绝对全新原装现货供应!	询价
深圳市宝隆宏业科技有限公司	61LV6416-10TL	0	2122+		9880	全新原装正品现货,优势渠道可含税,假一赔十	询价
深圳市旺财半导体有限公司	61LV6416-10TL	ISSI	23+		2800	正品原装货价格低qq:2987726803	询价
深圳市宏世佳电子科技有限公司	61LV6416-10TL	INT	2023+	TSOP	3265	全新原厂原装产品、公司现货销售	询价
深圳市得捷芯城科技有限公司	61LV6416-12K	SI	23+	NA/	64	优势代理渠道,原装正品,可全系列订货开增值税票	询价
贸泽芯城（深圳）电子科技有限公司	61LV6416-15T	ICSI	22+	TSOP	3000	一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、	询价
深圳市恒创达实业有限公司	61M04D5	TI	2021	BGA	1000	全新、原装	询价
深圳市创新迹电子有限公司	61M04D5	TI	2023+	SOP-28	8700	原装现货	询价
深圳市河锋鑫科技有限公司	61M10	IR	22+		6000	终端可免费供样,支持BOM配单	询价
深圳市安富世纪电子有限公司	61M10	IR	23+		8000	只做原装现货	询价

更多61LV6416-10TL供应商更新时间2024-5-14 16:33:00

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