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IS61LV6416-10T	文件：452.42 Kbytes Page：8 Pages	64K X 16 HIGH SPEED CMOS STATIC RAM WITH 3.3 V SUPPLY DESCRIPTION TheICSIIS61LV6416isahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswithl	ICSI 矽成
IS61LV6416-10T	文件：146.94 Kbytes Page：16 Pages	64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY DESCRIPTION TheISSIIS61LV6416/IS61LV6416Lisahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas	ISSIIntegrated Silicon Solution Inc ISSI公司ISSI有限公司
IS61LV6416-10T	文件：100 bytes Page：1 Pages	包装：托盘封装/外壳：44-TSOP（0.400"，10.16mm 宽）类别：集成电路（IC）存储器描述：IC SRAM 1MBIT PARALLEL 44TSOP II	ISSIIntegrated Silicon Solution Inc ISSI公司ISSI有限公司
IS61LV6416-10TI	文件：452.42 Kbytes Page：8 Pages	64K X 16 HIGH SPEED CMOS STATIC RAM WITH 3.3 V SUPPLY DESCRIPTION TheICSIIS61LV6416isahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswithl	ICSI 矽成
IS61LV6416-10TI	文件：146.94 Kbytes Page：16 Pages	64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY DESCRIPTION TheISSIIS61LV6416/IS61LV6416Lisahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas	ISSIIntegrated Silicon Solution Inc ISSI公司ISSI有限公司
IS61LV6416-10TL	文件：146.94 Kbytes Page：16 Pages	64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY DESCRIPTION TheISSIIS61LV6416/IS61LV6416Lisahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas	ISSIIntegrated Silicon Solution Inc ISSI公司ISSI有限公司
IS61LV6416-10TLI	文件：146.94 Kbytes Page：16 Pages	64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY DESCRIPTION TheISSIIS61LV6416/IS61LV6416Lisahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas	ISSIIntegrated Silicon Solution Inc ISSI公司ISSI有限公司
IS61LV6416-10TI-TR	文件：100 bytes Page：1 Pages	包装：托盘封装/外壳：44-TSOP（0.400"，10.16mm 宽）类别：集成电路（IC）存储器描述：IC SRAM 1MBIT PARALLEL 44TSOP II	ISSIIntegrated Silicon Solution Inc ISSI公司ISSI有限公司
IS61LV6416-10TL	文件：100 bytes Page：1 Pages	包装：卷带（TR）封装/外壳：44-TSOP（0.400"，10.16mm 宽）类别：集成电路（IC）存储器描述：IC SRAM 1MBIT PARALLEL 44TSOP II	ISSIIntegrated Silicon Solution Inc ISSI公司ISSI有限公司
IC61LV6416-10B	文件：95.44 Kbytes Page：9 Pages	64Kx16HightSpeedSRAMwith3.3V DESCRIPTION TheICSIIC61LV6416isahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswithl	ICSI 矽成
IC61LV6416-10BI	文件：95.44 Kbytes Page：9 Pages	64Kx16HightSpeedSRAMwith3.3V DESCRIPTION TheICSIIC61LV6416isahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswithl	ICSI 矽成
IC61LV6416-10K	文件：95.44 Kbytes Page：9 Pages	64Kx16HightSpeedSRAMwith3.3V DESCRIPTION TheICSIIC61LV6416isahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswithl	ICSI 矽成
IC61LV6416-10KI	文件：95.44 Kbytes Page：9 Pages	64Kx16HightSpeedSRAMwith3.3V DESCRIPTION TheICSIIC61LV6416isahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswithl	ICSI 矽成
IC61LV6416-10T	文件：95.44 Kbytes Page：9 Pages	64Kx16HightSpeedSRAMwith3.3V DESCRIPTION TheICSIIC61LV6416isahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswithl	ICSI 矽成
IC61LV6416-10TI	文件：95.44 Kbytes Page：9 Pages	64Kx16HightSpeedSRAMwith3.3V DESCRIPTION TheICSIIC61LV6416isahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswithl	ICSI 矽成
IS61LV6416-10	文件：452.42 Kbytes Page：8 Pages	64KX16HIGHSPEEDCMOSSTATICRAMWITH3.3VSUPPLY DESCRIPTION TheICSIIS61LV6416isahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswithl	ICSI 矽成
IS61LV6416-10B	文件：452.42 Kbytes Page：8 Pages	64KX16HIGHSPEEDCMOSSTATICRAMWITH3.3VSUPPLY DESCRIPTION TheICSIIS61LV6416isahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswithl	ICSI 矽成
IS61LV6416-10BI	文件：452.42 Kbytes Page：8 Pages	64KX16HIGHSPEEDCMOSSTATICRAMWITH3.3VSUPPLY DESCRIPTION TheICSIIS61LV6416isahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswithl	ICSI 矽成
IS61LV6416-10BI	文件：146.94 Kbytes Page：16 Pages	64Kx16HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY DESCRIPTION TheISSIIS61LV6416/IS61LV6416Lisahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas	ISSIIntegrated Silicon Solution Inc ISSI公司ISSI有限公司
IS61LV6416-10BLI	文件：146.94 Kbytes Page：16 Pages	64Kx16HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY DESCRIPTION TheISSIIS61LV6416/IS61LV6416Lisahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas	ISSIIntegrated Silicon Solution Inc ISSI公司ISSI有限公司

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产品属性

产品编号：
IS61LV6416-10T
制造商：
ISSI, Integrated Silicon Solution Inc
类别：
集成电路（IC） > 存储器
包装：
托盘
存储器类型：
易失
存储器格式：
SRAM
技术：
SRAM - 异步
存储容量：
1Mb（64K x 16）
存储器接口：
并联
写周期时间 - 字，页：
10ns
电压 - 供电：
3.135V ~ 3.6V
工作温度：
0°C ~ 70°C（TA）
安装类型：
表面贴装型
封装/外壳：
44-TSOP（0.400"，10.16mm 宽）
供应商器件封装：
44-TSOP II
描述：
IC SRAM 1MBIT PARALLEL 44TSOP II

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市凌旭科技有限公司	IS61LV6416-10T	ISSI	2016+	TSOP44	4000	只做原装,假一罚十,公司可开17%增值税发票!	询价
深圳市坤融电子科技有限公司	IS61LV6416-10T	ICSI	2022+	TSOP44	71	原厂授权代理价格绝对优势	询价
深圳市澳亿芯电子科技有限公司	IS61LV6416-10T	ISSI	23+	TSOP44	98900	原厂原装正品现货!!	询价
深圳市创新迹电子有限公司	IS61LV6416-10T	ICSI	2021+	TSOP-44	6800	原厂原装,欢迎咨询	询价
鑫勃源（上海北京青岛）有限公司	IS61LV6416-10T	ISSI	23+	QFN	18000		询价
深圳市益百分电子有限公司	IS61LV6416-10T	ISSI	TSOP44		2238	全新原装进口自己库存优势	询价
绿盛电子(香港)有限公司	IS61LV6416-10T	ISSI?	2015+	SOP/DIP	19889	一级代理原装现货,特价热卖!	询价
深圳市毅创腾电子科技有限公司	IS61LV6416-10T	ISSI	23+	44-TSOPII	9550	专业分销产品!原装正品!价格优势!	询价
深圳市昌和盛利电子有限公司	IS61LV6416-10T	ISSI	23+	N/A	9526		询价
深圳市莱克讯科技有限公司	IS61LV6416-10T	ISSI	2017+	TSOP	35689	深圳香港代理原装现货库存(美国-日本-台湾)可开正规增	询价

更多IS61LV6416-10T供应商更新时间2024-4-24 18:06:00

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