首页 >IS61LV6416-10T>规格书列表
| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
IS61LV6416-10T | 64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY DESCRIPTION The ISSI IS61LV6416/IS61LV6416L is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 文件：146.94 Kbytes 页数：16 Pages | ISSI 矽成半导体 | ISSI | |
IS61LV6416-10T | 64K X 16 HIGH SPEED CMOS STATIC RAM WITH 3.3 V SUPPLY DESCRIPTION The ICSI IS61LV6416 is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with l 文件：452.42 Kbytes 页数：8 Pages | ICSI | ICSI | |
64K X 16 HIGH SPEED CMOS STATIC RAM WITH 3.3 V SUPPLY DESCRIPTION The ICSI IS61LV6416 is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with l 文件：452.42 Kbytes 页数：8 Pages | ICSI | ICSI | ||
64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY DESCRIPTION The ISSI IS61LV6416/IS61LV6416L is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 文件：146.94 Kbytes 页数：16 Pages | ISSI 矽成半导体 | ISSI | ||
64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY DESCRIPTION The ISSI IS61LV6416/IS61LV6416L is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 文件：146.94 Kbytes 页数：16 Pages | ISSI 矽成半导体 | ISSI | ||
64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY DESCRIPTION The ISSI IS61LV6416/IS61LV6416L is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 文件：146.94 Kbytes 页数：16 Pages | ISSI 矽成半导体 | ISSI | ||
IS61LV6416-10T | Package：44-TSOP（0.400"，10.16mm 宽）；包装：托盘 类别：集成电路（IC） 存储器 描述：IC SRAM 1MBIT PARALLEL 44TSOP II | ISSI, Integrated Silicon Solution Inc | ISSI, Integrated Silicon Solution Inc | |
Package：44-TSOP（0.400"，10.16mm 宽）；包装：托盘 类别：集成电路（IC） 存储器 描述：IC SRAM 1MBIT PARALLEL 44TSOP II | ISSI, Integrated Silicon Solution Inc | ISSI, Integrated Silicon Solution Inc | ||
Package：44-TSOP（0.400"，10.16mm 宽）；包装：卷带（TR） 类别：集成电路（IC） 存储器 描述：IC SRAM 1MBIT PARALLEL 44TSOP II | ISSI, Integrated Silicon Solution Inc | ISSI, Integrated Silicon Solution Inc |
产品属性
- 产品编号：
IS61LV6416-10T
- 制造商：
ISSI, Integrated Silicon Solution Inc
- 类别：
集成电路（IC） > 存储器
- 包装：
托盘
- 存储器类型：
易失
- 存储器格式：
SRAM
- 技术：
SRAM - 异步
- 存储容量：
1Mb（64K x 16）
- 存储器接口：
并联
- 写周期时间 - 字，页：
10ns
- 电压 - 供电：
3.135V ~ 3.6V
- 工作温度：
0°C ~ 70°C（TA）
- 安装类型：
表面贴装型
- 封装/外壳：
44-TSOP（0.400"，10.16mm 宽）
- 供应商器件封装：
44-TSOP II
- 描述：
IC SRAM 1MBIT PARALLEL 44TSOP II
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ISSI |
2016+ |
TSOP44 |
4000 |
只做原装,假一罚十,公司可开17%增值税发票! |
询价 | ||
ICSI |
24+ |
TSOP44 |
71 |
原厂授权代理 价格绝对优势 |
询价 | ||
ISSI |
23+ |
TSOP44 |
98900 |
原厂原装正品现货!! |
询价 | ||
ICSI |
2021+ |
TSOP-44 |
6800 |
原厂原装,欢迎咨询 |
询价 | ||
ISSI |
25+ |
QFN |
18000 |
原厂直接发货进口原装 |
询价 | ||
ISSI |
TSOP44 |
2238 |
全新原装进口自己库存优势 |
询价 | |||
ISSI? |
2015+ |
SOP/DIP |
19889 |
一级代理原装现货,特价热卖! |
询价 | ||
ISSI |
23+ |
44-TSOPII |
9550 |
专业分销产品!原装正品!价格优势! |
询价 | ||
ISSI |
17+ |
TSOP |
6200 |
100%原装正品现货 |
询价 | ||
ISSI |
24+ |
3 |
原装现货假一罚十 |
询价 |
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