MOS Field Effect Power Transistors

MOS Field Effect Power Transistors

文件：110 Kbytes 页数：2 Pages

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Single & Dual Output, 6W Ultra-Wide Input Range DC/DC Converters

文件：193.6 Kbytes 页数：2 Pages

MPD

1 pC Chanrge Injection, 100 pA Leakage, CMOS -5 V/5 V/3 V Quad SPST Switches

GENERAL DESCRIPTION The ADG611/ADG612/ADG613 are monolithic CMOS devices containing four independently selectable switches. These switches offer ultralow charge injection of 1 pC over the full input signal range and typical leakage currents of 10 pA at 25°C. The devices are fully specified for ±

文件：152.56 Kbytes 页数：12 Pages

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亚德诺

1 pC Charge Injection, 100 pA Leakage

文件：361.34 Kbytes 页数：16 Pages

AD

亚德诺