High-speed access and chip select times

文件：87.67 Kbytes 页数：11 Pages

IDT

Package：24-DIP（0.300"，7.62mm）；包装：卷带（TR） 类别：集成电路（IC） 存储器 描述：IC SRAM 16KBIT PARALLEL 24DIP

Renesas Electronics America Inc

Package：24-DIP（0.300"，7.62mm）；包装：卷带（TR） 类别：集成电路（IC） 存储器 描述：IC SRAM 16KBIT PARALLEL 24DIP

Renesas Electronics America Inc

CMOS STATIC RAM 16K (2K x 8 BIT)

DESCRIPTION: The IDT6116SA/LA is a 16,384-bit high-speed static RAM organized as 2K x 8. It is fabricated using IDTs high-performance, high-reliability CMOS technology. FEATURES: • High-speed access and chip select times — Military: 20/25/35/45/55/70/90/120/150ns (max.) — Commerc

文件：111.94 Kbytes 页数：11 Pages

IDT

CMOS STATIC RAM 16K (2K x 8 BIT)

DESCRIPTION: The IDT6116SA/LA is a 16,384-bit high-speed static RAM organized as 2K x 8. It is fabricated using IDTs high-performance, high-reliability CMOS technology. FEATURES: • High-speed access and chip select times — Military: 20/25/35/45/55/70/90/120/150ns (max.) — Commerc

文件：111.94 Kbytes 页数：11 Pages

IDT

CMOS STATIC RAM 16K (2K x 8 BIT)

DESCRIPTION: The IDT6116SA/LA is a 16,384-bit high-speed static RAM organized as 2K x 8. It is fabricated using IDTs high-performance, high-reliability CMOS technology. FEATURES: • High-speed access and chip select times — Military: 20/25/35/45/55/70/90/120/150ns (max.) — Commerc

文件：111.94 Kbytes 页数：11 Pages

IDT