型号下载 订购功能描述制造商 上传企业LOGO

NDS0610

丝印:610;Package:SOT-23;P-Channel Enhancement Mode Field Effect Transistor

文件:463.16 Kbytes 页数:6 Pages

ONSEMI

安森美半导体

BQ296100DSGR

丝印:6100;Package:WSON;BQ296xxx Overvoltage Protection for 2-Series, 3-Series, and 4-Series Cell Li-Ion Batteries with Regulated Output Supply

1 Features • 2-series, 3-series, and 4-series cell overvoltage protection (OVP) • Fixed delay timer to trigger FET drive output (3-s, 4-s, 5.5-s, or 6.5-s options) • Factory programmed OVP threshold (threshold range 3.85V to 4.6V) • Output options: active high • High-accuracy overvoltage p

文件:2.094679 Mbytes 页数:32 Pages

TI

德州仪器

BQ296100DSGR

丝印:6100;Package:WSON;BQ296xxx Overvoltage Protection for 2-Series, 3-Series, and 4-Series Cell Li-Ion Batteries with Regulated Output Supply

1 Features • 2-series, 3-series, and 4-series cell overvoltage protection (OVP) • Fixed delay timer to trigger FET drive output (3-s, 4-s, 5.5-s, or 6.5-s options) • Factory programmed OVP threshold (threshold range 3.85 V to 4.6 V) • Output options: active high • High-accuracy overvoltage

文件:2.17415 Mbytes 页数:32 Pages

TI

德州仪器

BQ296100DSGT

丝印:6100;Package:WSON;BQ296xxx Overvoltage Protection for 2-Series, 3-Series, and 4-Series Cell Li-Ion Batteries with Regulated Output Supply

1 Features • 2-series, 3-series, and 4-series cell overvoltage protection (OVP) • Fixed delay timer to trigger FET drive output (3-s, 4-s, 5.5-s, or 6.5-s options) • Factory programmed OVP threshold (threshold range 3.85 V to 4.6 V) • Output options: active high • High-accuracy overvoltage

文件:2.17415 Mbytes 页数:32 Pages

TI

德州仪器

BQ296100DSGT

丝印:6100;Package:WSON;BQ296xxx Overvoltage Protection for 2-Series, 3-Series, and 4-Series Cell Li-Ion Batteries with Regulated Output Supply

1 Features • 2-series, 3-series, and 4-series cell overvoltage protection (OVP) • Fixed delay timer to trigger FET drive output (3-s, 4-s, 5.5-s, or 6.5-s options) • Factory programmed OVP threshold (threshold range 3.85V to 4.6V) • Output options: active high • High-accuracy overvoltage p

文件:2.094679 Mbytes 页数:32 Pages

TI

德州仪器

TPA6100A2D

丝印:6100A2;Package:SOIC;50-mW ULTRALOW VOLTAGE STEREO HEADPHONE AUDIO POWER AMPLIFIER

FEATURES · 50-mW Stereo Output · Low Supply Current . . . 0.75 mA · Low Shutdown Current . . . 50 nA · Pin Compatible With LM4881 and TPA102 · Pop Reduction Circuitry · Internal Midrail Generation · Thermal and Short-Circuit Protection · Surface-Mount Packaging – MSOP and SOIC · 1.6-V to

文件:559.25 Kbytes 页数:19 Pages

TI

德州仪器

TPA6100A2D.A

丝印:6100A2;Package:SOIC;50-mW ULTRALOW VOLTAGE STEREO HEADPHONE AUDIO POWER AMPLIFIER

FEATURES · 50-mW Stereo Output · Low Supply Current . . . 0.75 mA · Low Shutdown Current . . . 50 nA · Pin Compatible With LM4881 and TPA102 · Pop Reduction Circuitry · Internal Midrail Generation · Thermal and Short-Circuit Protection · Surface-Mount Packaging – MSOP and SOIC · 1.6-V to

文件:559.25 Kbytes 页数:19 Pages

TI

德州仪器

TPA6100A2DR

丝印:6100A2;Package:SOIC;50-mW ULTRALOW VOLTAGE STEREO HEADPHONE AUDIO POWER AMPLIFIER

FEATURES · 50-mW Stereo Output · Low Supply Current . . . 0.75 mA · Low Shutdown Current . . . 50 nA · Pin Compatible With LM4881 and TPA102 · Pop Reduction Circuitry · Internal Midrail Generation · Thermal and Short-Circuit Protection · Surface-Mount Packaging – MSOP and SOIC · 1.6-V to

文件:559.25 Kbytes 页数:19 Pages

TI

德州仪器

TPA6100A2DR.A

丝印:6100A2;Package:SOIC;50-mW ULTRALOW VOLTAGE STEREO HEADPHONE AUDIO POWER AMPLIFIER

FEATURES · 50-mW Stereo Output · Low Supply Current . . . 0.75 mA · Low Shutdown Current . . . 50 nA · Pin Compatible With LM4881 and TPA102 · Pop Reduction Circuitry · Internal Midrail Generation · Thermal and Short-Circuit Protection · Surface-Mount Packaging – MSOP and SOIC · 1.6-V to

文件:559.25 Kbytes 页数:19 Pages

TI

德州仪器

TPA6101A2D

丝印:6101A2;Package:SOIC;50-mW ULTRALOW-VOLTAGE, FIXED-GAIN STEREO HEADPHONE AUDIO POWER AMPLIFIER

Minimal External Components Required 1.6-V to 3.6-V Supply Voltage Range 50-mW Stereo Output Low Supply Current . . . 0.75 mA Low Shutdown Current . . . 50 nA Gain Set Internally to 2 dB Pop Reduction Circuitry Internal Mid-Rail Generation Thermal and Short-Circuit Protection Surface-Moun

文件:714.9 Kbytes 页数:25 Pages

TI

德州仪器

详细参数

  • 型号:

    610

  • 功能描述:

    MOSFET P-Channel FET Enhancement Mode

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
FAIRCHILD仙童
2009
SOT23
2800
全新原装 正品现货
询价
ON/安森美
25+
SOT-23
37620
ON/安森美全新特价NDS0610即刻询购立享优惠#长期有货
询价
FSC
16+
SOT-23
3600
进口原装现货/价格优势!
询价
Fairchild
24+
SOT-23
663000
一级代理/全新现货/长期供应!
询价
ON/安森美
2019+
SOT-23
78550
原厂渠道 可含税出货
询价
ON
20+
SOT-23
50000
询价
ONSEMI
25+
NA
11000
全新原装!优势库存热卖中!
询价
ONSemi
2129
SOT-23
90628
全新原装公司现货
询价
ON Semiconductor Corporation
25+
SMD
918000
明嘉莱只做原装正品现货
询价
FAIRCHILD/仙童
2019+PB
SOT-23
3600
原装正品 可含税交易
询价
更多610供应商 更新时间2026-1-17 16:00:00