N-CHANNEL ENHANCEMENT MODE

DESCRIPTION The UT60T03 can provide excellent RDS(ON) and low gate charge by using UTC’s advanced trench technology. FEATURES * Very simple drive requirement * Very low gate charge * Fast switching

文件：251.22 Kbytes 页数：5 Pages

UTC

友顺

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is universally preferred for all commercial-industrial surface mount applications and suited f

文件：79.99 Kbytes 页数：4 Pages

A-POWER

富鼎先进电子

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is universally preferred for all commercial-industrial surface mount applications and suited f

文件：79.99 Kbytes 页数：4 Pages

A-POWER

富鼎先进电子

Simple Drive Requirement Low Gate Charge

Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-263 package is universally preferred for all commercial-industrial surface mount applications and suited f

文件：82.01 Kbytes 页数：4 Pages

A-POWER

富鼎先进电子