N-Channel Trench Power MOSFET

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FUMAN

富满微

功率MOS系列

FM

富满

UV Power METERS

A Wide Lineup of 248 nm, 365 nm and 436 nm Type The C6080 series is a compact UV power meter specifically designed to measure the intensity of UV radiation emitted from the light guide output end of a UV spot light source. The C6080 uses a UV sensor that exhibits stable sensitivity even after

文件：141.23 Kbytes 页数：2 Pages

HAMAMATSUHamamatsu Photonics Co.,Ltd.

滨松光子滨松光子学株式会社

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES ■ 60V, 5.6A, RDS(ON) = 45mΩ @VGS = 10V. RDS(ON) = 75mΩ @VGS = 4.5V. ■ -60V, -3.3A, RDS(ON) = 130mΩ @VGS = -10V. RDS(ON) = 180mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capabi

文件：467.65 Kbytes 页数：7 Pages

CET

华瑞

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES ■ 60V, 5.6A, RDS(ON) = 45mΩ @VGS = 10V. RDS(ON) = 75mΩ @VGS = 4.5V. ■ -60V, -3.3A, RDS(ON) = 130mΩ @VGS = -10V. RDS(ON) = 180mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capabi

文件：522.78 Kbytes 页数：7 Pages

CET

华瑞