丝印：600N253S；Package：PG-TO220；OptiMOSTM 3 Power-Transistor, 250 V

Features • Ideal for high frequency switching and sync. rec. • Excellent gate charge x RDS(on) product (FOM) • Very low on-resistance RDS(on) • N-channel, normal level • 100 avalanche tested • Pb-free plating; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：1.09635 Mbytes 页数：10 Pages

INFINEON

英飞凌

丝印：600N65E1；Package：TO-252AA；650V N-Channel Super Junction MOSFET

Feature:  RDS(ON) Max, VGS@10V: 600mΩ  Easy to use/ drive  High Speed Switching and Low RDS(ON)  100 Avalanche Tested  100 Rg Tested  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 standard Mechanical Data  Case: TO-252AA package  Terminals: So

文件：637.98 Kbytes 页数：7 Pages

PANJIT

強茂

丝印：600N65E1；Package：ITO-220AB-F；650V N-Channel Super Junction MOSFET

Feature:  RDS(ON) Max, VGS@10V: 600mΩ  Easy to use/ drive  High Speed Switching and Low RDS(ON)  100 Avalanche Tested  100 Rg Tested  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 standard Mechanical Data  Case: ITO-220AB-F package  Terminals:

文件：657.95 Kbytes 页数：7 Pages

PANJIT

強茂