DMP6250SFDF-13

Marking：5P；Package：U-DFN2020-6；P-CHANNEL ENHANCEMENT MODE MOSFET

DescriptionandApplications ThisMOSFETisdesignedtominimizetheon-stateresistance (RDS(ON))yetmaintainsuperiorswitchingperformance,makingitideal forhighefficiencypowermanagementapplications. BatteryManagementApplication PowerManagementFunctions DC-DCConverters

DMP6250SFDF-7

Marking：5P；Package：U-DFN2020-6；P-CHANNEL ENHANCEMENT MODE MOSFET

DescriptionandApplications ThisMOSFETisdesignedtominimizetheon-stateresistance (RDS(ON))yetmaintainsuperiorswitchingperformance,makingitideal forhighefficiencypowermanagementapplications. BatteryManagementApplication PowerManagementFunctions DC-DCConverters

ESD05V16NS-HA

Marking：5P；Package：DFN1610；Transient Voltage Suppressors for ESD Protection

Features MoistureSensitivityLevel(MSL-1) AEC-Q101qualified ProtectsoneI/Oorpowerline Workingvoltages:5.0V Lowclampingvoltage Lowleakagecurrent IEC61000-4-2(ESD)±30kV(air),±30kV(contact) IEC61000-4-4(EFT)40A(5/50ns) IEC61000-4-5(Lightning)110A(8/20μs) Applicat

ESDA7P60-1U1M

Marking：5P；Package：DFN1610-2；1-Line Uni-directional TVS Diode

Features *1200Wpeakpulsepower(8/20s) *Lowleakage:nAlevel *Lowoperatingvoltage:5V *UltraLowLeakage:nALevel *Ultralowclampingvoltage *Onepowerlineprotects *Complieswithfollowingstandards: -IEC61000-4-2(ESD)immunitytest Airdischarge:±30kV Contactdischarge:±30

FMMT2907AR

Marking：5P；Package：SOT-23；SOT23 PNP SILICON PLANAR SWITCHING TRANSISTOR

FEATURES *Fastswitching COMPLIMENTARYTYPES-FMMT2907-FMMT2222 -FMMT2907A-FMMT2222A PARTMARKINGDETAIL-FMMT2907-2BZ FMMT2907A-2F FMMT2907R-4P

MM1Z27

Marking：5P；Package：SOD-123F；SILICON PLANAR ZENER DIODES

Features •Totalpowerdissipation:max.500mW •Smallplasticpackagesuitableforsurfacemounteddesign •Toleranceapproximately±5

MM1Z27

Marking：5P；Silicon Planar Zener Diodes

FEATURES •Totalpowerdissipation:Max.500mW. •Widezenerreversevoltagerange2.0Vto75V. •Smallplasticpackagesuitableforsurfacemounteddesign. •Toleranceapproximately±5

NHDTC123JU

Marking：5P；Package：SC-70；80 V, 100 mA NPN resistor-equipped transistors

1.Generaldescription NPNResistor-EquippedTransistor(RET)familyinaverysmallSOT323(SC-70)Surface-Mounted Device(SMD)plasticpackage. Table1.Productoverview TypenumberR1R2Package kΩkΩNexperiaJEITA PNPcomplement: NHDTC123JU2.247NHDTA123JU NHDTC143ZU4.747NHDTA143

NHDTC123JU-Q

Marking：5P；Package：SOT323；80 V, 100 mA NPN resistor-equipped transistors

Featuresandbenefits •100mAoutputcurrentcapability •Highbreakdownvoltage •Built-inresistors •Simplifiescircuitdesign •Reducescomponentcount •Reducespickandplacecosts •QualifiedaccordingtoAEC-Q101andrecommendedforuseinautomotiveapplications

NXV100XP

Marking：5P；Package：SOT23；30 V, P-channel Trench MOSFET

1.Generaldescription P-channelenhancementmodeField-EffectTransistor(FET)inasmallSOT23Surface-Mounted Device(SMD)plasticpackageusingTrenchMOSFETtechnology. 2.Featuresandbenefits •Lowthresholdvoltage •Veryfastswitching •TrenchMOSFETtechnology 3.Applications •