丝印：5M；Package：SOD523；Zener Diode

Features ● High reliability ● Very sharp reverse characteristic ● Low reverse current level ● Zener Voltage 2.4V~47V

文件：2.67073 Mbytes 页数：5 Pages

SAMYANG

三阳电子

丝印：5M；Package：SOD-123F；SILICON PLANAR ZENER DIODES

Features • Total power dissipation: max. 500 mW • Small plastic package suitable for surface mounted design • Tolerance approximately ± 5

文件：272.29 Kbytes 页数：4 Pages

SEMTECH_ELEC

先之科半导体

丝印：5M；Silicon Planar Zener Diodes

FEATURES • Total power dissipation: Max. 500mW. • Wide zener reverse voltage range 2.0V to 75V. • Small plastic package suitable for surface mounted design. • Tolerance approximately±5

文件：776.59 Kbytes 页数：2 Pages

JUXING

广东钜兴电子

丝印：5M；Package：SC-70；80 V, 100 mA NPN resistor-equipped transistors

Features and benefits • 100 mA output current capability • High breakdown voltage • Built-in resistors • Simplifies circuit design • Reduces component count • Reduces pick and place costs • AEC-Q101 qualified

文件：296.53 Kbytes 页数：16 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：5M；Package：SC-70；80 V, 100 mA NPN resistor-equipped transistors

1. General description NPN Resistor-Equipped Transistor (RET) family in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number R1 R2 Package kΩ kΩ Nexperia JEITA PNP complement: NHDTC114EU 10 10 NHDTA114EU NHDTC124EU 22 22 NHDTA124EU

文件：296.54 Kbytes 页数：16 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：5M；Package：SOT23；20 V, P-channel Trench MOSFET

1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Low threshold voltage • Very fast switching • Trench MOSFET technology 3. Applications •

文件：268 Kbytes 页数：12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：5M；Package：SC-62；80 V, 4.0 A PNP low VCEsat (BISS) transistor

Features * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

文件：331.99 Kbytes 页数：16 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：5M；Package：SOT666；PNP/PNP resistor-equipped transistors; R1 = 47 kW, R2 = 22 kW

Features * Built-in bias resistors * Simplifies circuit design * Reduces component count * Reduces pick and place cost

文件：186.7 Kbytes 页数：12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：5M；Package：SOD523；Schottky Barrier Diode

FEATURES ● We declare that the material of product compliance with RoHS requirements and Halogen Free. ● S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable. ● Extremely fast switching speed ● Ex

文件：522.5 Kbytes 页数：3 Pages

LEIDITECH

雷卯电子

丝印：5M；Package：SOT-23-5；2A, 1MHz, 6V CMCOT Synchronous Step-Down Converter

General Description The RT8097D is a high efficiency synchronous step-down DC-DC converter. Its input voltage range is from 2.7V to 6V and provides an adjustable regulated output voltage from 0.6V to 3.4V while delivering up to 2A of output current. The internal synchronous low on-resistance pow

文件：475.08 Kbytes 页数：16 Pages

RichTek

立锜科技