丝印：5D0N；Package：WDFNW6；MOSFET - Power, Single N-Channel 30 V, 4.2 m, 77 A

Features • Small Footprint for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

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ONSEMI

安森美半导体