丝印：5962R1320201VXC；Package：CFP；TPS7H1101-SP 1.5-V to 7-V Input, 3-A, Radiation-Hardened Ultra-Low Dropout (LDO) Regulator

1 Features 1• 5962R13202: – Radiation Hardness Assurance (RHA) up to TID 100 krad (Si) – Total Ionizing Dose 100 krad (Si) – ELDRS-Free 100 krad (Si) – Dose Rate 10 mRAD (si)/s – Single Event Latchup (SEL) Immune to LET = 85 MeV-cm2/mg – SEB and SEGR Immune to LET = 85 MeV-cm2/mg – SET/

文件：1.17053 Mbytes 页数：33 Pages

TI

德州仪器

丝印：5962R1320201VXC；Package：CFP；TPS7H1101-SP 1.5-V to 7-V Input, 3-A, Radiation-Hardened Ultra-Low Dropout (LDO) Regulator

1 Features 1• 5962R13202: – Radiation Hardness Assurance (RHA) up to TID 100 krad (Si) – Total Ionizing Dose 100 krad (Si) – ELDRS-Free 100 krad (Si) – Dose Rate 10 mRAD (si)/s – Single Event Latchup (SEL) Immune to LET = 85 MeV-cm2/mg – SEB and SEGR Immune to LET = 85 MeV-cm2/mg – SET/

文件：1.17053 Mbytes 页数：33 Pages

TI

德州仪器

丝印：5962R1320201VXC；Package：CFP；TPS7H1101-SP 1.5-V to 7-V Input, 3-A, Radiation-Hardened Ultra-Low Dropout (LDO) Regulator

1 Features 1• 5962R13202: – Radiation Hardness Assurance (RHA) up to TID 100 krad (Si) – Total Ionizing Dose 100 krad (Si) – ELDRS-Free 100 krad (Si) – Dose Rate 10 mRAD (si)/s – Single Event Latchup (SEL) Immune to LET = 85 MeV-cm2/mg – SEB and SEGR Immune to LET = 85 MeV-cm2/mg – SET/

文件：1.17053 Mbytes 页数：33 Pages

TI

德州仪器

丝印：5962R1320201VXC；Package：CFP；TPS7H1101-SP 1.5-V to 7-V Input, 3-A, Radiation-Hardened Ultra-Low Dropout (LDO) Regulator

1 Features 1• 5962R13202: – Radiation Hardness Assurance (RHA) up to TID 100 krad (Si) – Total Ionizing Dose 100 krad (Si) – ELDRS-Free 100 krad (Si) – Dose Rate 10 mRAD (si)/s – Single Event Latchup (SEL) Immune to LET = 85 MeV-cm2/mg – SEB and SEGR Immune to LET = 85 MeV-cm2/mg – SET/

文件：1.17053 Mbytes 页数：33 Pages

TI

德州仪器

1.5-V to 7-V, ULTRA LOW DROPOUT REGULATOR

文件：1.26367 Mbytes 页数：34 Pages

TI

德州仪器

Radiation-Hardened Ultra-Low Dropout (LDO) Regulator

文件：995.65 Kbytes 页数：29 Pages

TI

德州仪器