丝印：5962-1822001VXC；Package：CFP；TPS7H2211-SP Radiation-Hardness-Assured (RHA) 14-V, 3.5-A eFuse

1 Features • Total ionizing dose (TID) characterized to 100 krad(Si) – Radiation hardness assurance availability of 100 krad(Si) • Single-event effects (SEE) characterized – Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy

文件：1.91639 Mbytes 页数：42 Pages

TI

德州仪器

丝印：5962-1822001VXC；Package：CFP；TPS7H2211-SP and TPS7H2211-SEP Radiation-Hardness-Assured (RHA) 14-V, 3.5-A eFuse

1 Features • Total ionizing dose (TID) characterized to 100 krad(Si) – Radiation hardness assurance availability of 100 krad(Si) • Single-event effects (SEE) characterized – Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy

文件：2.68613 Mbytes 页数：49 Pages

TI

德州仪器

丝印：5962-1822001VXC；Package：CFP；TPS7H2211-SP and TPS7H2211-SEP Radiation-Hardness-Assured (RHA) 14V, 3.5A eFuse

1 Features • Total ionizing dose (TID) characterized to 100krad(Si) – Radiation hardness assurance availability of 100krad(Si) • Single-event effects (SEE) characterized – Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy t

文件：2.61896 Mbytes 页数：51 Pages

TI

德州仪器

丝印：5962-1822001VXC；Package：CFP；TPS7H2211-SP and TPS7H2211-SEP Radiation-Hardness-Assured (RHA) 14V, 3.5A eFuse

1 Features • Total ionizing dose (TID) characterized to 100krad(Si) – Radiation hardness assurance availability of 100krad(Si) • Single-event effects (SEE) characterized – Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy t

文件：2.58479 Mbytes 页数：51 Pages

TI

德州仪器

丝印：5962-1822001VXC；Package：CFP；TPS7H2211-SP Radiation-Hardness-Assured (RHA) 14-V, 3.5-A eFuse

文件：1.8583 Mbytes 页数：41 Pages

TI

德州仪器

丝印：5962-1822001VXC；Package：CFP；TPS7H2211-SP Radiation-Hardness-Assured (RHA) 14-V, 3.5-A eFuse

1 Features • Total ionizing dose (TID) characterized to 100 krad(Si) – Radiation hardness assurance availability of 100 krad(Si) • Single-event effects (SEE) characterized – Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy

文件：1.91639 Mbytes 页数：42 Pages

TI

德州仪器

丝印：5962-1822001VXC；Package：CFP；TPS7H2211-SP and TPS7H2211-SEP Radiation-Hardness-Assured (RHA) 14-V, 3.5-A eFuse

1 Features • Total ionizing dose (TID) characterized to 100 krad(Si) – Radiation hardness assurance availability of 100 krad(Si) • Single-event effects (SEE) characterized – Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy

文件：2.68613 Mbytes 页数：49 Pages

TI

德州仪器

丝印：5962-1822001VXC；Package：CFP；TPS7H2211-SP and TPS7H2211-SEP Radiation-Hardness-Assured (RHA) 14V, 3.5A eFuse

1 Features • Total ionizing dose (TID) characterized to 100krad(Si) – Radiation hardness assurance availability of 100krad(Si) • Single-event effects (SEE) characterized – Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy t

文件：2.61896 Mbytes 页数：51 Pages

TI

德州仪器

丝印：5962-1822001VXC；Package：CFP；TPS7H2211-SP and TPS7H2211-SEP Radiation-Hardness-Assured (RHA) 14V, 3.5A eFuse

1 Features • Total ionizing dose (TID) characterized to 100krad(Si) – Radiation hardness assurance availability of 100krad(Si) • Single-event effects (SEE) characterized – Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy t

文件：2.58479 Mbytes 页数：51 Pages

TI

德州仪器

丝印：5962-1822001VXC；Package：CFP；TPS7H2211-SP Radiation-Hardness-Assured (RHA) 14-V, 3.5-A eFuse

文件：1.8583 Mbytes 页数：41 Pages

TI

德州仪器