丝印：58；Package：SOT1089；Low-power dual function gate

1. General description The 74AUP1G885 provides two functions in one device. The output state of the outputs (1Y, 2Y) is determined by the inputs (A, B and C). The output 1Y provides the Boolean function: 1Y = A × C. The output 2Y provides the Boolean function: 2Y = A × B + A × C. Schmitt trigg

文件：263.72 Kbytes 页数：18 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：58；Package：SOT1116；Low-power dual function gate

1. General description The 74AUP1G885 provides two functions in one device. The output state of the outputs (1Y, 2Y) is determined by the inputs (A, B and C). The output 1Y provides the Boolean function: 1Y = A × C. The output 2Y provides the Boolean function: 2Y = A × B + A × C. Schmitt trigg

文件：263.72 Kbytes 页数：18 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：58；Package：SOT1203；Low-power dual function gate

1. General description The 74AUP1G885 provides two functions in one device. The output state of the outputs (1Y, 2Y) is determined by the inputs (A, B and C). The output 1Y provides the Boolean function: 1Y = A × C. The output 2Y provides the Boolean function: 2Y = A × B + A × C. Schmitt trigg

文件：263.72 Kbytes 页数：18 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：58；Package：SOT1234；WLAN LNA Switch

General description The BGS8458, also known as the WLAN3101C, is a fully integrated MMIC Low-Noise Amplifier and SP2T switch for transmit path. For WLAN applications in the 4.9 GHz to 5.925 GHz ISM band. Manufactured using high performance QUBiC eighth generation SiGe:C technology of NXP. The

文件：186.53 Kbytes 页数：13 Pages

恩XP

丝印：58；Package：SOD523；Zener Diode

Features ● High reliability ● Very sharp reverse characteristic ● Low reverse current level ● Zener Voltage 2.4V~47V

文件：2.67073 Mbytes 页数：5 Pages

SAMYANG

三阳电子

丝印：58；Package：SOT23；Voltage regulator diodes

1. General description Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. The diodes are available in the normalized E24 ±1 (BZX84-A), ±2 (BZX84-B) and approximately ±5 (BZX84-C) tolerance range. The series includes 37 breakdown volt

文件：324 Kbytes 页数：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：58；Package：XQFN10；SIM card interface level translator with EMI filter and ESD protection

1 General description The NVT4558 device is built for interfacing a SIM card with a single low-voltage 1.08 V to 1.98 V host side interface. The NVT4558 contains three 1.62 V to 3.6 V level translators to convert the data, RSTn and CLKn signals between a SIM card and a host microcontroller. The

文件：312.03 Kbytes 页数：22 Pages

恩XP

丝印：58；Package：XQFN10；SIM card interface level translator with EMI filter and ESD protection

General description The NVT4558 device is built for interfacing a SIM card with a single low-voltage 1.08 V to 1.98 V host side interface. The NVT4558 contains three 1.62 V to 3.6 V level translators to convert the data, RSTn and CLKn signals between a SIM card and a host microcontroller. The

文件：311.62 Kbytes 页数：23 Pages

恩XP

丝印：58；Package：SC-59；PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = open

FEATURES •Built-in bias resistors •Simplified circuit design •Reduction of component count •Reduced pick and place costs. APPLICATIONS •General purpose switching and amplification •Inverter and interface circuits •Circuit driver.

文件：401.94 Kbytes 页数：15 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：58；Package：SOD-123FL；Schottky Barrier Diode

●Features High reliability Small power mold type Ultra low IR ●Application General rectification ●Structure Silicon epitaxial planar

文件：2.09571 Mbytes 页数：9 Pages

ROHM

罗姆