丝印：58；Package：SOT1089；Low-power dual function gate

1. General description The 74AUP1G885 provides two functions in one device. The output state of the outputs (1Y, 2Y) is determined by the inputs (A, B and C). The output 1Y provides the Boolean function: 1Y = A × C. The output 2Y provides the Boolean function: 2Y = A × B + A × C. Schmitt trigg

文件：263.72 Kbytes 页数：18 Pages

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丝印：58；Package：SOT1116；Low-power dual function gate

1. General description The 74AUP1G885 provides two functions in one device. The output state of the outputs (1Y, 2Y) is determined by the inputs (A, B and C). The output 1Y provides the Boolean function: 1Y = A × C. The output 2Y provides the Boolean function: 2Y = A × B + A × C. Schmitt trigg

文件：263.72 Kbytes 页数：18 Pages

NEXPERIA

安世

丝印：58；Package：SOT1203；Low-power dual function gate

1. General description The 74AUP1G885 provides two functions in one device. The output state of the outputs (1Y, 2Y) is determined by the inputs (A, B and C). The output 1Y provides the Boolean function: 1Y = A × C. The output 2Y provides the Boolean function: 2Y = A × B + A × C. Schmitt trigg

文件：263.72 Kbytes 页数：18 Pages

NEXPERIA

安世

丝印：58；Package：SOT1234；WLAN LNA Switch

General description The BGS8458, also known as the WLAN3101C, is a fully integrated MMIC Low-Noise Amplifier and SP2T switch for transmit path. For WLAN applications in the 4.9 GHz to 5.925 GHz ISM band. Manufactured using high performance QUBiC eighth generation SiGe:C technology of 恩XP. The

文件：186.53 Kbytes 页数：13 Pages

恩XP

丝印：58；Package：SOD523；Zener Diode

Features ● High reliability ● Very sharp reverse characteristic ● Low reverse current level ● Zener Voltage 2.4V~47V

文件：2.67073 Mbytes 页数：5 Pages

SAMYANG

三阳电子

丝印：58；Package：SOT23；Voltage regulator diodes

1. General description Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. The diodes are available in the normalized E24 ±1 (BZX84-A), ±2 (BZX84-B) and approximately ±5 (BZX84-C) tolerance range. The series includes 37 breakdown volt

文件：324 Kbytes 页数：14 Pages

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丝印：58；Package：XQFN10；SIM card interface level translator with EMI filter and ESD protection

1 General description The NVT4558 device is built for interfacing a SIM card with a single low-voltage 1.08 V to 1.98 V host side interface. The NVT4558 contains three 1.62 V to 3.6 V level translators to convert the data, RSTn and CLKn signals between a SIM card and a host microcontroller. The

文件：312.03 Kbytes 页数：22 Pages

恩XP

丝印：58；Package：XQFN10；SIM card interface level translator with EMI filter and ESD protection

General description The NVT4558 device is built for interfacing a SIM card with a single low-voltage 1.08 V to 1.98 V host side interface. The NVT4558 contains three 1.62 V to 3.6 V level translators to convert the data, RSTn and CLKn signals between a SIM card and a host microcontroller. The

文件：311.62 Kbytes 页数：23 Pages

恩XP

丝印：58；Package：SC-59；PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = open

FEATURES •Built-in bias resistors •Simplified circuit design •Reduction of component count •Reduced pick and place costs. APPLICATIONS •General purpose switching and amplification •Inverter and interface circuits •Circuit driver.

文件：401.94 Kbytes 页数：15 Pages

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丝印：58；Package：SOD-123FL；Schottky Barrier Diode

●Features High reliability Small power mold type Ultra low IR ●Application General rectification ●Structure Silicon epitaxial planar

文件：2.09571 Mbytes 页数：9 Pages

ROHM

罗姆