丝印：56；Package：DO-214AB；Surface Mount Transient Voltage Suppressor Power 3000Watts

FEATURES For surface mounted applications in order tooptimize board space. Low profile package. Glass passivated junction. Low inductance. 3000W peak pulse power capability at 10x1000us waveform, repetition rate (duty cycles):0.01 Plastic package has Underwriters Laboratory Flammability.

文件：325.35 Kbytes 页数：5 Pages

YFWDIODE

佑风微

丝印：56；Package：SOT353-1；Low-power inverter with voltage-level translator

1. General description The 74AUP1T14 provides a single inverting function. This device ensures a very low static and dynamic power consumption across the entire VCC range from 2.3 V to 3.6 V. The 74AUP1T14 is designed for logic-level translation applications with input switching levels that ac

文件：234.45 Kbytes 页数：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：56；Package：SOT1226-3；Low-power inverter with voltage-level translator

1. General description The 74AUP1T14 provides a single inverting function. This device ensures a very low static and dynamic power consumption across the entire VCC range from 2.3 V to 3.6 V. The 74AUP1T14 is designed for logic-level translation applications with input switching levels that ac

文件：234.45 Kbytes 页数：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：56；Package：SOD523；Zener Diode

Features ● High reliability ● Very sharp reverse characteristic ● Low reverse current level ● Zener Voltage 2.4V~47V

文件：2.67073 Mbytes 页数：5 Pages

SAMYANG

三阳电子

丝印：56；Package：SOT23；Voltage regulator diodes

1. General description Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. The diodes are available in the normalized E24 ±1 (BZX84-A), ±2 (BZX84-B) and approximately ±5 (BZX84-C) tolerance range. The series includes 37 breakdown volt

文件：324 Kbytes 页数：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：56；Package：MELF；500mW SURFACE MOUNT ZENER DIODE

Planar Die Construction 500mW Power Dissipation 2.0 – 56V Nominal Zener Voltage Ideally Suited for Automated Assembly For Use in Voltage Stabilizer or Reference

文件：65.93 Kbytes 页数：6 Pages

WTE

Won-Top Electronics

丝印：56；Package：SOT346；NPN resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ

FEATURES •Built-in bias resistors •Simplified circuit design •Reduction of component count •Reduced pick and place costs. APPLICATIONS •General purpose switching and amplification •Inverter and interface circuits •Circuit driver.

文件：420.47 Kbytes 页数：15 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：56；Package：SOT346；NPN resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ

FEATURES •Built-in bias resistors •Simplified circuit design •Reduction of component count •Reduced pick and place costs. APPLICATIONS •General purpose switching and amplification •Inverter and interface circuits •Circuit driver.

文件：420.45 Kbytes 页数：15 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：56；Package：SOT-346；PNP resistor-equipped transistors; R1 = 100 kW, R2 = 100 kW

PNP resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ DESCRIPTION PNP resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details). FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Re

文件：93.83 Kbytes 页数：14 Pages

PHI

飞利浦

丝印：56；Package：SOT-346；NPN resistor-equipped transistors; R1 = 100 k廓, R2 = 100 k廓

NPN resistor equipped transistor PDTC115EE SOT416 PDTC115EEF SOT490 PDTC115EK SOT346 PDTC115EM SOT883 PDTC115ES SOT54 (TO-92) PDTC115ET SOT23 PDTC115EU SOT323 • Built-in bias resistors • Simplified circuit design • Reduction of component count • R

文件：188.86 Kbytes 页数：14 Pages

恩XP