丝印：52；DIGITAL TRANSISTOR

Features 1) Built-In Biasing Resistors, R1 = R2 = 10kΩ 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit) . 3) Only the on/off conditions need to be set for operation, making the circuit design e

文件：704.49 Kbytes 页数：9 Pages

ROHM

罗姆

丝印：52；Package：SOT-416；Digital transistors (built-in resistors)

Features 1) Built-In Biasing Resistors, R1 = 2.2kΩ, R2 = 10kΩ 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit) . 3) Only the on/off conditions need to be set for operation, making the circuit design

文件：68.32 Kbytes 页数：3 Pages

ROHM

罗姆

丝印：52；Package：SOT-346；Digital transistors (built-in resistors)

Features 1) Built-In Biasing Resistors, R1 = 2.2kΩ, R2 = 10kΩ 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit) . 3) Only the on/off conditions need to be set for operation, making the circuit design

文件：68.32 Kbytes 页数：3 Pages

ROHM

罗姆

丝印：52；Package：SOT-346；PNP -100mA -50V Digital Transistor

Features 1) Built-In Biasing Resistors, R1 = 2.2kΩ, R2 = 10kΩ 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit) . 3) Only the on/off conditions need to be set for operation, making the circuit design

文件：1.62082 Mbytes 页数：11 Pages

ROHM

罗姆

丝印：52；Package：SOT-323；Digital transistors (built-in resistors)

Features 1) Built-In Biasing Resistors, R1 = 2.2kΩ, R2 = 10kΩ 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit) . 3) Only the on/off conditions need to be set for operation, making the circuit design

文件：68.32 Kbytes 页数：3 Pages

ROHM

罗姆

丝印：52；Package：SOT-323FL；PNP -100mA -50V Digital Transistor (Bias Resistor Built-in Transistor)

lFeatures 1) Built-In Biasing Resistors, 　 R1 = 2.2kΩ, R2 = 10kΩ 2) Built-in bias resistors enable the configuration of 　an inverter circuit without connecting external 　input resistors (see inner circuit) . 3) Only the on/off conditions need to be set 　for operation, making the circuit des

文件：1.32573 Mbytes 页数：13 Pages

ROHM

罗姆

丝印：52；Package：SOT-346；NPN resistor-equipped transistors; R1 = 4.7 k廓, R2 = open

DESCRIPTION NPN resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details). FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • General purpose switching and amplif

文件：180.93 Kbytes 页数：14 Pages

恩XP

丝印：52；Package：SOT-346；NPN resistor-equipped transistors; R1 = 4.7 kOHM, R2 = open

DESCRIPTION NPN resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details). FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • General purpose switching and amplif

文件：92.31 Kbytes 页数：14 Pages

PHI

PHI

丝印：52；Package：SOD-323；Zener diode

Features 1) Compact, 2-pin mini-mold type for high-density mounting. (UMD2) 2) Compatible with chip mounter for automated production. 3) High reliability Applications Constant voltage control

文件：58.81 Kbytes 页数：3 Pages

ROHM

罗姆

丝印：52；Package：SOD-523；SILICON LOW VOLTAGE HYPERABRUPT VARACTOR DIODES

Device Description A range of silicon varactor diodes for use in frequency control and filtering. Featuring closely controlled CV characteristics, low voltage operation and high Q. Low reverse current ensures very low phase noise performance. These parts can be used with control voltages from 0

文件：62.14 Kbytes 页数：6 Pages

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