Bipolar Transistor 50V, 0.4A, Low VCE(sat) NPN Single SSFP

Bipolar Transistor 50V, 0.4A, Low VCE(sat) NPN Single SSFP Features • Large current capacity • Low collector-to-emitter saturation voltage (resistance) : RCE(sat) typ=175mΩ[IC=0.5A, IB=50mA] • Ultrasmall package facilitates miniaturization in end products • Small ON-resistance (Ron) Applica

文件：515.6 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Package：SC-81；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 50V 0.4A 3SSFP

ONSEMI

安森美半导体

N & P?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: N‐CH P‐CH BVDSS 20V ‐20V RDSON (MAX.) 45mΩ 100mΩ ID 4.8A ‐3.4A Pb‐Free Lead Plating & Halogen Free

文件：228.51 Kbytes 页数：8 Pages

EXCELLIANCE

杰力科技

Low-Frequency General-Purpose Amplifier Applications

Low-Frequency General-Purpose Amplifier Applications Features • Large current capacitance. • Low collector-to-emitter saturation voltage (resistance). RCE(sat) typ=175mΩ [IC=0.5A, IB=50mA]. • Ultrasmall package facilitates miniaturization in end products. • Small ON-resistance (Ron). Ap

文件：55.88 Kbytes 页数：4 Pages

SANYO

三洋

Low-Frequency General-Purpose Amplifier Applications

Low-Frequency General-Purpose Amplifier Applications Features • Large current capacitance. • Low collector-to-emitter saturation voltage (resistance). RCE(sat) typ=175mΩ [IC=0.5A, IB=50mA]. • Ultrasmall package facilitates miniaturization in end products. • Small ON-resistance (Ron). Ap

文件：32.74 Kbytes 页数：4 Pages

SANYO

三洋

Low-Frequency General-Purpose Amplifier Applications

Low-Frequency General-Purpose Amplifier Applications Features • Large current capacitance. • Low collector-to-emitter saturation voltage (resistance). RCE(sat) typ=175mΩ [IC=0.5A, IB=50mA]. • Ultrasmall package facilitates miniaturization in end products. • Small ON-resistance (Ron). Ap

文件：44.16 Kbytes 页数：4 Pages

SANYO

三洋