ADRF5022-EVALZ

SiliconSPDTSwitch,Nonreflective,100MHzto45GHz

GENERALDESCRIPTION TheADRF5022isanonreflective,single-poledouble-throw(SPDT) switchmanufacturedinthesiliconprocess. TheADRF5022operatesfrom100MHzto45GHzwithatypical insertionlossof2.3dBandisolationof43dB.Thedevicehasan RFinput-powerhandlingcapabilityof

AM5022

SMTPowerInductors

APT5022AVR

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

POWERMOSV® PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •Fast

APT5022BN

N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS

POWERMOSIV® N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS

APT5022BN

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=27A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.22Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

APT5022BNR

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=27A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.22Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

C5022

SiliconNPNTripleDiffused

Features •HighbreakdownvoltageV(BR)CEO=1500VMin Application Highvoltageamplifier

CTDO5022

PowerInductors-Unshielded

CTDO5022F

PowerInductors-Unshielded

CTDO5022HC

PowerInductors-Unshielded