Silicon SPDT Switch, Nonreflective, 100 MHz to 45 GHz

GENERAL DESCRIPTION The ADRF5022 is a nonreflective, single-pole double-throw (SPDT) switch manufactured in the silicon process. The ADRF5022 operates from 100 MHz to 45 GHz with a typical insertion loss of 2.3 dB and isolation of 43 dB. The device has an RF input-power handling capability of

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SMT Power Inductors

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Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast

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N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

POWER MOS IV® N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

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