| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
N-Channel 60 V (D-S) MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 |  | ||
N-Channel 60 V (D-S) MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | | ||
N-Channel 60 V (D-S) MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | | ||
N-Channel 60-V (D-S) MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=4A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.6Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=4A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.6Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | ||
60VN-ChannelEnhancementModeMOSFET | PANJITPANJIT International Inc. 强茂強茂股份有限公司 |  | ||
60VN-ChannelEnhancementModeMOSFET Features RDS(ON),VGS@10V,ID@3A | PANJITPANJIT International Inc. 强茂強茂股份有限公司 | | ||
4A,60V,0.600Ohm,LogicLevel,N-ChannelPowerMOSFETs TheRFD4N06L,RFD4N06LSMareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsspecificallydesignedforusewithlogiclevel(5volt)drivingsourcesinapplicationssuchasprogrammablecontrollers,automotiveswitching,andsolenoiddrivers.Thisperformanceisaccomplished | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  | ||
4A,60V,0.600Ohm,LogicLevel,N-ChannelPowerMOSFETs TheRFD4N06L,RFD4N06LSMareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsspecificallydesignedforusewithlogiclevel(5volt)drivingsourcesinapplicationssuchasprogrammablecontrollers,automotiveswitching,andsolenoiddrivers.Thisperformanceisaccomplished | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 |  | ||
4A,60V,0.600Ohm,LogicLevel,N-ChannelPowerMOSFETs TheRFD4N06L,RFD4N06LSMareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsspecificallydesignedforusewithlogiclevel(5volt)drivingsourcesinapplicationssuchasprogrammablecontrollers,automotiveswitching,andsolenoiddrivers.Thisperformanceisaccomplished | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | ||
4A,60V,0.600Ohm,LogicLevel,N-ChannelPowerMOSFETs TheRFD4N06L,RFD4N06LSMareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsspecificallydesignedforusewithlogiclevel(5volt)drivingsourcesinapplicationssuchasprogrammablecontrollers,automotiveswitching,andsolenoiddrivers.Thisperformanceisaccomplished | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
4A,50Vand60V,0.800Ohm,N-ChannelPowerMOSFETs TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydriversanddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrivepower.These | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | ||
4A,50Vand60V,0.800Ohm,LogicLevel,N-ChannelPowerMOSFETs TheRFP4N05LandRFP4N06LareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydriversanddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgate | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
23+ |
N/A |
45980 |
正品授权货源可靠 |
询价 | |||
VB |
2019 |
TO-220 |
55000 |
绝对原装正品假一罚十! |
询价 | ||
INFINEON |
23+ |
TO-252 |
12300 |
全新原装真实库存含13点增值税票! |
询价 | ||
INFINEON/英飞凌 |
23+ |
TO-252 |
10000 |
公司只做原装正品 |
询价 | ||
17 |
22+ |
TO-263 |
132 |
原装现货假一赔十 |
询价 | ||
INFINEON |
22+ |
TO-252 |
6000 |
十年配单,只做原装 |
询价 | ||
INFINEON/英飞凌 |
2021+ |
TO-220 |
10700 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
询价 | ||
INFINEON/英飞凌 |
22+ |
TO-252 |
91185 |
终端免费提供样品 可开13%增值税发票 |
询价 | ||
INFINEON/英飞凌 |
22+ |
TO-252 |
91185 |
询价 | |||
INFINEON |
23+ |
TO-252 |
8000 |
专注配单,只做原装进口现货 |
询价 |
