AZ4718-01F.R7G

Marking：48；Package：DFN2020P3E；Transient Voltage Suppressing Device For ESD/Transient/Surge Protection

Features
ESDprotectionforonelinewithuni-directional
Providetransientprotectionforonelineto IEC61000-4-2(ESD)±30kV(air/contact) IEC61000-4-4(EFT)80A(5/50ns) IEC61000-4-5(Lightning)138A(8/20ms)
Suitablefor,18Vandbelow,operatingvoltage applications
2.0mm

PDTC123EK

Marking：48；Package：SOT346；NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ

FEATURES •Built-inbiasresistors •Simplifiedcircuitdesign •Reductionofcomponentcount •Reducedpickandplacecosts. APPLICATIONS •Generalpurposeswitchingandamplification •Inverterandinterfacecircuits •Circuitdriver.

PDTC123EU

Marking：48；Package：SOT323；NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ

FEATURES •Built-inbiasresistors •Simplifiedcircuitdesign •Reductionofcomponentcount •Reducedpickandplacecosts. APPLICATIONS •Generalpurposeswitchingandamplification •Inverterandinterfacecircuits •Circuitdriver.

PDTC123EU

Marking：48；Package：SC-70；50 V, 100 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ

1.Generaldescription NPNResistor-EquippedTransistor(RET)inasmallSOT323(SC-70)Surface-MountedDevice (SMD)plasticpackage. PNPcomplement:PDTA123EU 2.Featuresandbenefits •Built-inbiasresistors •Simplifiescircuitdesign •Reducescomponentcount •Reducespickandplac

PEMD48

Marking：48；Package：SOT666；50 V, 100 mA NPN/PNP resistor-equipped double transistor; R1 = 47 kΩ, R2 = 47 kΩ and R1 = 2.2 kΩ, R2 = 47 kΩ

1.Generaldescription NPN/PNPdoubleResistor-EquippedTransistor(RET)inanultrasmallandflatleadSOT666 Surface-MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits •100mAoutputcurrentcapability •Built-inbiasresistors •Simplifiescircuitdesign •Reducescompone

PEMD48

Marking：48；Package：SOT666；NPN/PNP resistor-equipped transistors; R1 = 47 k, R2 = 47 k and R1 = 2.2 k, R2 = 47 k

Featuresandbenefits 100mAoutputcurrentcapability Built-inbiasresistors Simplifiescircuitdesign Reducescomponentcount Reducespickandplacecosts AEC-Q101qualified

PUMD48

Marking：48；Package：SC-88；NPN/PNP resistor-equipped transistors; R1 = 47 k, R2 = 47 k and R1 = 2.2 k, R2 = 47 k

Featuresandbenefits 100mAoutputcurrentcapability Built-inbiasresistors Simplifiescircuitdesign Reducescomponentcount Reducespickandplacecosts AEC-Q101qualified

PUMD48-Q

Marking：48；Package：TSSOP6；NPN/PNP resistor-equipped double transistor; R1 = 47 kΩ, R2 = 47 kΩ and R1 = 2.2 kΩ, R2 = 47 kΩ

1.Generaldescription NPN/PNPdoubleResistor-EquippedTransistor(RET)inaverysmallSOT363(SC-88)Surface- MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits •100mAoutputcurrentcapability •Built-inbiasresistors •Simplifiescircuitdesign •Reducescomponentcoun

UCLAMP2482PWQ

Marking：48；24V ESD and EOS Protection for 2-Line Automotive Applications

Description μClamp®seriesofTVSarraysaredesignedtoprotect sensitiveelectronicsfromdamageorlatch-updueto ESDandsurge.Theyfeaturelargecross-sectionalarea junctionsforconductinghightransientcurrents.They offerdesirablecharacteristicsforboardlevelprotection includ

UCLAMP2482PWQ.C

Marking：48；24V ESD and EOS Protection for 2-Line Automotive Applications

Description μClamp®seriesofTVSarraysaredesignedtoprotect sensitiveelectronicsfromdamageorlatch-updueto ESDandsurge.Theyfeaturelargecross-sectionalarea junctionsforconductinghightransientcurrents.They offerdesirablecharacteristicsforboardlevelprotection includ