丝印：45P40；Package：TO-252；P-Channel Enhancement Mode Power MOSFET

Description The 45P40 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：684.94 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：45P40；Package：TO-252；P-Channel Enhancement Mode Power MOSFET

Description The 45P40A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：867.62 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

PRESSURE SWITCHES

Features and Benefits • Hermetically Sealed Sensor • Snap Acting/Automatic Reset • Custom Engineered Solutions • Factory Calibrated Setpoints • SPST or SPDT both normally open or closed contacts • Electrically rated to 600V (44/45PS) • High cycle life capability (42/44PS) • Environmental s

文件：530.44 Kbytes 页数：3 Pages

SENSATA

森萨塔

4.5H X 8.08L X .062 TH. WIRING SIDE/COMPONENT SIDE

文件：933.58 Kbytes 页数：1 Pages

VECTOR

Prototyping Boards (Circbord®)

文件：277.58 Kbytes 页数：4 Pages

VECTOR

4.5H X 8.08L X .062 TH. WIRING SIDE/COMPONENT SIDE

文件：933.58 Kbytes 页数：1 Pages

VECTOR

25PS, 42PS, 44PS, 45PS and 46PS Series Pressure Switches

文件：56.88 Kbytes 页数：4 Pages

TI

德州仪器

包装：盒 类别：开关 配件 描述：SECURITY CAP

APEM Inc.

丝印：45P3LLH6；Package：PowerFLAT；P-channel -30 V, 11 m廓 typ., -45 A STripFET??H6 Power MOSFET in a PowerFLAT??5x6 package

Description This device is a P-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Features  Very low on-resistance  Very low gate charge  High avalanche ruggedness 

文件：841.85 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

丝印：45P20；Package：DFN3.3x3.3EP；P-Channel Enhancement Mode Power MOSFET

文件：234.8 Kbytes 页数：6 Pages

RECTRON

丽正国际