AOD4120

iscN-ChannelMOSFETTransistor

DESCRIPTION •Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES •DrainCurrent–ID=25A@TC=25℃ •DrainSourceVoltage- :VDSS=20V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=18mΩ(Max) •100avalanchetested •MinimumLot-to-Lot

AOD4120

N-ChannelMOSFETusesadvancedtrenchtechnology

Description： ThisN-ChannelMOSFETusesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(on)withlowgatecharge.Itcanbeusedinawidevarietyofapplications. Features： 1)VDS=20V,ID=45A,RDS(ON)

AOD4120

N-ChannelEnhancementModeFieldEffectTransistor

AOI4120

N-Channel30-V(D-S)MOSFET

AOI4120

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=53A@TC=25℃ ·DrainSourceVoltage :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=70mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ASSR-4120

GeneralPurpose,FormA,SolidStateRelay(PhotoMOSFET)

ASSR-4120

General-Purpose,FormA,SolidStateRelay(PhotoMOSFET)(400V/0.12A/25廓)

BPDV4120RM-WF-SA

100GHzBALANCEDPHOTODETECTOR

FEATURES •High3dBbandwidthof100GHz •Opticalwindowat1550nm •Excellentlinearity •Highresponsivityof0.25A/W •LowPDLof0.75dB APPLICATIONS •OpticalCommunicationsystems •AdvancedcomponentR&D

BPDV4120RQ-WF-SA

100GHzBALANCEDPHOTODETECTOR

FEATURES •High3dBbandwidthof100GHz •Opticalwindowat1550nm •Excellentlinearity •Highresponsivityof0.25A/W •LowPDLof0.75dB APPLICATIONS •OpticalCommunicationsystems •AdvancedcomponentR&D

BX4120L

BROADBANDxDSL,HPN,CMCs

BROADBANDACCESS:xDSL,HPN,CMCs Broadbandhascomealongwayinthepastfewyears.Pulsecontinuestoleadthewaywithabroadrangeofcomponentsthatenabletwisted-paircopper,fiberandcoaxialcabletodeliverhigh-speedservicestohomesandbusinesses.Pulsecomponentsarealsous