丝印：410N4F7；Package：I2PAK；Automotive N-channel 40 V, 1.5 mΩ typ., 180 A STripFET™ F7 Power MOSFET in an I²PAK package

Features  Designed for automotive applications  Among the lowest RDS(on) on the market  Excellent FoM (figure of merit)  Low Crss/Ciss ratio for EMI immunity  High avalanche ruggedness Applications  Switching applications Description This N-channel Power MOSFET utilizes STripFE

文件：666.39 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

Automotive N-channel 40 V, 1.5 mΩ typ., 180 A STripFET™ F7 Power MOSFET in an I²PAK package

Features  Designed for automotive applications  Among the lowest RDS(on) on the market  Excellent FoM (figure of merit)  Low Crss/Ciss ratio for EMI immunity  High avalanche ruggedness Applications  Switching applications Description This N-channel Power MOSFET utilizes STripFE

文件：666.39 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

Automotive-grade N-channel 40 V, 1.5 m typ., 180 A STripFETTM F7 Power MOSFET in a TO-220 package

Features  Designed for automotive applications and AEC-Q101 qualified  Among the lowest RDS(on) on the market  Excellent FoM (figure of merit)  Low Crss/Ciss ratio for EMI immunity  High avalanche ruggedness Description This N-channel Power MOSFET utilizes STripFET™ F7 technology w

文件：675.43 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

QFP

ST

上传：深圳市宏捷佳电子科技有限公司

FBGA

STM

信盛

上传：深圳权泰科技有限公司