丝印：410NDC；Package：DFN8；MOSFET - Power, DUAL COOL N-Channel, DFN8 5x6 40 V, 0.87 m, 310 A

Features • Advanced Dual−sided Cooled Packaging • Small Footprint (5x6 mm) for Compact Design • Ulra Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant • MSL1 R

文件：386.85 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：410N4F7；Package：I2PAK；Automotive N-channel 40 V, 1.5 mΩ typ., 180 A STripFET™ F7 Power MOSFET in an I²PAK package

Features  Designed for automotive applications  Among the lowest RDS(on) on the market  Excellent FoM (figure of merit)  Low Crss/Ciss ratio for EMI immunity  High avalanche ruggedness Applications  Switching applications Description This N-channel Power MOSFET utilizes STripFE

文件：666.39 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

丝印：410NDC；Package：DFN8；MOSFET - Power, DUAL COOL N-Channel, DFN8 5x6 40 V, 0.87 m, 310 A

文件：347.61 Kbytes 页数：7 Pages

ONSEMI

安森美半导体