40A mps,100 Volts N-CHANNEL MOSFET

FEATURE ● 40A, 100V, RDS(ON) = 40mΩ @VGS=10V/20A ● Low gate charge ● Low Ciss ● Fast switching ● 100 avalanche tested ● Improved dv/dt capability

文件：194.01 Kbytes 页数：2 Pages

CHONGQING

平伟实业

40A mps,100 Volts N-CHANNEL MOSFET

FEATURE ● 40A, 100V, RDS(ON) = 40mΩ @VGS=10V/20A ● Low gate charge ● Low Ciss ● Fast switching ● 100 avalanche tested ● Improved dv/dt capability

文件：194.01 Kbytes 页数：2 Pages

CHONGQING

平伟实业

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 100V, 37A, RDS(ON) = 32mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

文件：423.21 Kbytes 页数：4 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 37A, RDS(ON) = 32mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. Lead free product is acquired.

文件：608.59 Kbytes 页数：4 Pages

CET-MOS

华瑞